›› 2014, Vol. 23 ›› Issue (11): 118507-118507.doi: 10.1088/1674-1056/23/11/118507

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes

马莉, 沈光地, 刘建朋, 高志远, 徐晨, 王勋   

  1. Key Laboratory of Opto-electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2014-03-14 修回日期:2014-05-13 出版日期:2014-11-15 发布日期:2014-11-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11204009).

Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes

Ma Li (马莉), Shen Guang-Di (沈光地), Liu Jian-Peng (刘建朋), Gao Zhi-Yuan (高志远), Xu Chen (徐晨), Wang Xun (王勋)   

  1. Key Laboratory of Opto-electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • Received:2014-03-14 Revised:2014-05-13 Online:2014-11-15 Published:2014-11-15
  • Contact: Ma Li E-mail:mali@emails.bjut.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11204009).

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摘要： In this paper, a new equivalent circuit model of GaN-based light emitting diodes (LEDs) is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n-contact electrode materials (LEDs with Ni/Au and LEDs with Cr/Au) are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance.

关键词: GaN-based light emitting diodes, series resistance, luminous efficacy

Abstract: In this paper, a new equivalent circuit model of GaN-based light emitting diodes (LEDs) is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n-contact electrode materials (LEDs with Ni/Au and LEDs with Cr/Au) are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance.

Key words: GaN-based light emitting diodes, series resistance, luminous efficacy

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
73.61.Ey (III-V semiconductors) 78.60.Fi (Electroluminescence) 71.20.Mq (Elemental semiconductors)