中国物理B ›› 2013, Vol. 22 ›› Issue (9): 97201-097201.doi: 10.1088/1674-1056/22/9/097201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

邓永辉, 谢刚, 汪涛, 盛况   

  1. College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China
  • 收稿日期:2012-12-17 修回日期:2013-03-12 出版日期:2013-07-26 发布日期:2013-07-26
  • 基金资助:
    Project supported by the Ministry of Education of China (Grant No. 20100101110056) and the Natural Science Foundation for Distinguished Young Scholars of Zhejiang Province of China (Grant No. R1100468).

A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

Deng Yong-Hui (邓永辉), Xie Gang (谢刚), Wang Tao (汪涛), Sheng Kuang (盛况)   

  1. College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China
  • Received:2012-12-17 Revised:2013-03-12 Online:2013-07-26 Published:2013-07-26
  • Contact: Xie Gang E-mail:xielyz@zju.edu.cn
  • Supported by:
    Project supported by the Ministry of Education of China (Grant No. 20100101110056) and the Natural Science Foundation for Distinguished Young Scholars of Zhejiang Province of China (Grant No. R1100468).

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摘要： In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3×1017 cm-3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 μm and base doping as high as 8×1017 cm-3 contribute to a maximum current gain of only 128.

关键词: 4H-SiC, lateral bipolar junction transistor (BJT), high current gain, high breakdown voltage

Abstract: In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3×1017 cm-3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 μm and base doping as high as 8×1017 cm-3 contribute to a maximum current gain of only 128.

Key words: 4H-SiC, lateral bipolar junction transistor (BJT), high current gain, high breakdown voltage

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))