中国物理B ›› 2013, Vol. 22 ›› Issue (9): 97201-097201.doi: 10.1088/1674-1056/22/9/097201
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
邓永辉, 谢刚, 汪涛, 盛况
Deng Yong-Hui (邓永辉), Xie Gang (谢刚), Wang Tao (汪涛), Sheng Kuang (盛况)
摘要: In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3×1017 cm-3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 μm and base doping as high as 8×1017 cm-3 contribute to a maximum current gain of only 128.
中图分类号: (III-V and II-VI semiconductors)