Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
宓珉瀚, 张凯, 陈兴, 赵胜雷, 王冲, 张进成, 马晓华, 郝跃
Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)
Chin. Phys. B
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2014, (7): 77304
-077304
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DOI: 10.1088/1674-1056/23/7/077304