Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer
温慧娟, 张进成, 陆小力, 王之哲, 哈微, 葛莎莎, 曹荣涛, 郝跃
Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer
Wen Hui-Juan (温慧娟), Zhang Jin-Cheng (张进成), Lu Xiao-Li (陆小力), Wang Zhi-Zhe (王之哲), Ha Wei (哈微), Ge Sha-Sha (葛莎莎), Cao Rong-Tao (曹荣涛), Hao Yue (郝跃)
中国物理B
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2014, (3): 37302
-037302
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DOI: 10.1088/1674-1056/23/3/037302