中国物理B ›› 2014, Vol. 23 ›› Issue (3): 37302-037302.doi: 10.1088/1674-1056/23/3/037302
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
温慧娟, 张进成, 陆小力, 王之哲, 哈微, 葛莎莎, 曹荣涛, 郝跃
Wen Hui-Juan (温慧娟), Zhang Jin-Cheng (张进成), Lu Xiao-Li (陆小力), Wang Zhi-Zhe (王之哲), Ha Wei (哈微), Ge Sha-Sha (葛莎莎), Cao Rong-Tao (曹荣涛), Hao Yue (郝跃)
摘要: The quality of an AlGaN channel heterojunction on a sapphire substrate is massively improved by using an AlGaN/GaN composite buffer layer. We demonstrate an Al0.4Ga0.6N/Al0.18Ga0.82N heterojunction with a state-of-the-art mobility of 815 cm2/(V·s) and a sheet resistance of 890 Ω/ under room temperature. The crystalline quality and the electrical properties of the AlGaN heterojunction material are analyzed by atomic force microscopy, high-resolution X-ray diffraction, and van der Pauw Hall and capacitance–voltage (C–V) measurements. The results indicate that the improved electrical properties should derive from the reduced surface roughness and low dislocation density.
中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)