中国物理B ›› 2014, Vol. 23 ›› Issue (2): 27101-027101.doi: 10.1088/1674-1056/23/2/027101

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

吕元杰a, 冯志红a, 林兆军b, 顾国栋a, 敦少博a, 尹甲运a, 韩婷婷a, 蔡树军a   

  1. a Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
    b School of Physics, Shandong University, Jinan 250100, China
  • 收稿日期:2013-03-20 修回日期:2013-04-28 出版日期:2013-12-12 发布日期:2013-12-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60890192, 60876009, and 11174182).

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Lü Yuan-Jie (吕元杰)a, Feng Zhi-Hong (冯志红)a, Lin Zhao-Jun (林兆军)b, Gu Guo-Dong (顾国栋)a, Dun Shao-Bo (敦少博)a, Yin Jia-Yun (尹甲运)a, Han Ting-Ting (韩婷婷)a, Cai Shu-Jun (蔡树军)a   

  1. a Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
    b School of Physics, Shandong University, Jinan 250100, China
  • Received:2013-03-20 Revised:2013-04-28 Online:2013-12-12 Published:2013-12-12
  • Contact: Feng Zhi-Hong E-mail:blueledviet@yahoo.com.cn
  • About author:71.55.Eq; 73.30.+y; 85.30.Mn; 11.40.-q
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60890192, 60876009, and 11174182).

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摘要： Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current–voltage and capacitance–voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger’s and Poisson’s equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode.

关键词: Al(Ga)N/GaN, Schottky barrier height, current-transport mechanism, leakage current

Abstract: Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current–voltage and capacitance–voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger’s and Poisson’s equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode.

Key words: Al(Ga)N/GaN, Schottky barrier height, current-transport mechanism, leakage current

中图分类号:  (III-V semiconductors)

  • 71.55.Eq
73.30.+y (Surface double layers, Schottky barriers, and work functions) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 11.40.-q (Currents and their properties)