Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
吕元杰, 冯志红, 林兆军, 顾国栋, 敦少博, 尹甲运, 韩婷婷, 蔡树军
Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Cai Shu-Jun (蔡树军)
中国物理B
.
2014, (2): 27101
-027101
.
DOI: 10.1088/1674-1056/23/2/027101