中国物理B ›› 2014, Vol. 23 ›› Issue (2): 26801-026801.doi: 10.1088/1674-1056/23/2/026801
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王建霞, 汪连山, 杨少延, 李辉杰, 赵桂娟, 张恒, 魏鸿源, 焦春美, 朱勤生, 王占国
Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Yang Shao-Yan (杨少延), Li Hui-Jie (李辉杰), Zhao Gui-Juan (赵桂娟), Zhang Heng (张恒), Wei Hong-Yuan (魏鸿源), Jiao Chun-Mei (焦春美), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国)
摘要: The effects of V/Ⅲ growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/Ⅲ ratio. With decreasing V/Ⅲ ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/Ⅲ ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.
中图分类号: (Atomic force microscopy (AFM))