Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer

doi:10.1088/1674-1056/23/2/026801

中国物理B ›› 2014, Vol. 23 ›› Issue (2): 26801-026801.doi: 10.1088/1674-1056/23/2/026801

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Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer

王建霞, 汪连山, 杨少延, 李辉杰, 赵桂娟, 张恒, 魏鸿源, 焦春美, 朱勤生, 王占国

Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2013-07-18 修回日期:2013-08-13 出版日期:2013-12-12 发布日期:2013-12-12
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 91233111, 61274041, 11275228, 61006004, and 61076001), the Special Funds for Major State Basic Research Project (973 Program) of China (Grant No. 2012CB619305), the 863 High Technology R & D Program of China (Grant No. 2011AA03A101) and the Special Fund for LED Industrial Development of Guangdong Province of China (Grant No. 2012A080302003).

Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer

Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2013-07-18 Revised:2013-08-13 Online:2013-12-12 Published:2013-12-12
Contact: Wang Jian-Xia, Wang Lian-Shan, Yang Shao-Yan E-mail:ls-wang@semi.ac.cn;ls-shan@semi.ac.cn;sh-yyang@semi.ac.cn
About author:68.37.Ps; 68.55.A-; 78.55.Cr; 81.15.Gh
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 91233111, 61274041, 11275228, 61006004, and 61076001), the Special Funds for Major State Basic Research Project (973 Program) of China (Grant No. 2012CB619305), the 863 High Technology R & D Program of China (Grant No. 2011AA03A101) and the Special Fund for LED Industrial Development of Guangdong Province of China (Grant No. 2012A080302003).

摘要/Abstract

摘要： The effects of V/Ⅲ growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/Ⅲ ratio. With decreasing V/Ⅲ ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/Ⅲ ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.

关键词: V/Ⅲ ratio, a-plane GaN, InGaN interlayer, metalorganic chemical vapor deposition

Abstract: The effects of V/Ⅲ growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/Ⅲ ratio. With decreasing V/Ⅲ ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/Ⅲ ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.

Key words: V/Ⅲ ratio, a-plane GaN, InGaN interlayer, metalorganic chemical vapor deposition

中图分类号: (Atomic force microscopy (AFM))

68.37.Ps

68.55.A- (Nucleation and growth) 78.55.Cr (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

王建霞, 汪连山, 杨少延, 李辉杰, 赵桂娟, 张恒, 魏鸿源, 焦春美, 朱勤生, 王占国. Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer[J]. 中国物理B, 2014, 23(2): 26801-026801.

Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Yang Shao-Yan (杨少延), Li Hui-Jie (李辉杰), Zhao Gui-Juan (赵桂娟), Zhang Heng (张恒), Wei Hong-Yuan (魏鸿源), Jiao Chun-Mei (焦春美), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国). Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer[J]. Chin. Phys. B, 2014, 23(2): 26801-026801.

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Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer

Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer

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