中国物理B ›› 2011, Vol. 20 ›› Issue (3): 36106-036106.doi: 10.1088/1674-1056/20/3/036106

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Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

胡莎1, 刘军1, 程知群2, Zhang Qi-Jun3   

  1. (1)Key Laboratory of Radio-Frequency Circuit and System, Hangzhou Dianzi University, Hangzhou 310018, China; (2)Key Laboratory of Radio-Frequency Circuit and System, Hangzhou Dianzi University, Hangzhou 310018, China;Department of Electronics, Carleton University, Ottawa, K1S 5B6, Canada
  • 收稿日期:2010-08-30 修回日期:2010-10-18 出版日期:2011-03-15 发布日期:2011-03-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60776052).

Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

Cheng Zhi-Qun(程知群)a)b)†, Hu Sha(胡莎)a),Liu Jun(刘军) a), and Zhang Qi-Junb)   

  1. a Key Laboratory of Radio-Frequency Circuit and System, Hangzhou Dianzi University, Hangzhou 310018, China; b Department of Electronics, Carleton University, Ottawa, K1S 5B6, Canada
  • Received:2010-08-30 Revised:2010-10-18 Online:2011-03-15 Published:2011-03-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60776052).

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摘要： In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model.

关键词: AlGaN/GaN high electron mobility transistor, modeling, artificial neural network

Abstract: In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model.

Key words: AlGaN/GaN high electron mobility transistor, modeling, artificial neural network

中图分类号:  (III-V and II-VI semiconductors)

  • 61.72.uj
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 07.05.Tp (Computer modeling and simulation)