Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor
赵胜雷, 陈伟伟, 岳童, 王毅, 罗俊, 毛维, 马晓华, 郝跃
Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor
Zhao Sheng-Lei (赵胜雷), Chen Wei-Wei (陈伟伟), Yue Tong (岳童), Wang Yi (王毅), Luo Jun (罗俊), Mao Wei (毛维), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)
中国物理B
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2013, (11): 117307
-117307
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DOI: 10.1088/1674-1056/22/11/117307