Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/23/1/017303

Chin. Phys. B ›› 2014, Vol. 23 ›› Issue (1): 17303-017303.doi: 10.1088/1674-1056/23/1/017303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

马晓华^{a b}, 姜元祺^{a b}, 王鑫华^c, 吕敏^{a b}, 张霍^b, 陈伟伟^{a b}, 刘新宇^c

a School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;
b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
c Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2013-03-08 修回日期:2013-04-18 出版日期:2013-11-12 发布日期:2013-11-12
基金资助:
Project supported by the Program for New Century Excellent Talents in Universities, China (Grant No. NCET-12-0915).

Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

Ma Xiao-Hua (马晓华)^{a b}, Jiang Yuan-Qi (姜元祺)^{a b}, Wang Xin-Hua (王鑫华)^c, Lü Min (吕敏)^{a b}, Zhang Huo (张霍)^b, Chen Wei-Wei (陈伟伟)^{a b}, Liu Xin-Yu (刘新宇)^c

a School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;
b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
c Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2013-03-08 Revised:2013-04-18 Online:2013-11-12 Published:2013-11-12
Contact: Ma Xiao-Hua E-mail:xhma@xidian.edu.cn
Supported by:
Project supported by the Program for New Century Excellent Talents in Universities, China (Grant No. NCET-12-0915).

摘要/Abstract

摘要： This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors (HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.

关键词: AlGaN/GaN high electron mobility transistor, off-state stress, electron detrapping, degradation

Abstract: This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors (HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.

Key words: AlGaN/GaN high electron mobility transistor, off-state stress, electron detrapping, degradation

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 73.61.Ey (III-V semiconductors)

马晓华, 姜元祺, 王鑫华, 吕敏, 张霍, 陈伟伟, 刘新宇. Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors[J]. Chin. Phys. B, 2014, 23(1): 17303-017303.

Ma Xiao-Hua (马晓华), Jiang Yuan-Qi (姜元祺), Wang Xin-Hua (王鑫华), Lü Min (吕敏), Zhang Huo (张霍), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇). Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors[J]. Chin. Phys. B, 2014, 23(1): 17303-017303.

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Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

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