Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching
王波, 宿世臣, 何苗, 陈弘, 吴汶波, 张伟伟, 王巧, 陈虞龙, 高优, 张力, 朱克宝, 雷严
Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching
Wang Bo (王波), Su Shi-Chen (宿世臣), He Miao (何苗), Chen Hong (陈弘), Wu Wen-Bo (吴汶波), Zhang Wei-Wei (张伟伟), Wang Qiao (王巧), Chen Yu-Long (陈虞龙), Gao You (高优), Zhang Li (张力), Zhu Ke-Bao (朱克宝), Lei Yan (雷严)
中国物理B
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2013, (10): 106802
-106802
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DOI: 10.1088/1674-1056/22/10/106802