Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/22/5/057304

中国物理B ›› 2013, Vol. 22 ›› Issue (5): 57304-057304.doi: 10.1088/1674-1056/22/5/057304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors

张凯^a, 曹梦逸^a, 陈永和^a, 杨丽媛^a, 王冲^a, 马晓华^{a b}, 郝跃^a

a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Technical Physics, Xidian University, Xi'an 710071, China

收稿日期:2012-09-17 修回日期:2012-11-27 出版日期:2013-04-01 发布日期:2013-04-01
基金资助:
Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915) and the National Natural Science Foundation of China (Grant Nos. 61106106 and 61204085).

Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors

Zhang Kai (张凯)^a, Cao Meng-Yi (曹梦逸)^a, Chen Yong-He (陈永和)^a, Yang Li-Yuan (杨丽媛)^a, Wang Chong (王冲)^a, Ma Xiao-Hua (马晓华)^{a b}, Hao Yue (郝跃)^a

a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Technical Physics, Xidian University, Xi'an 710071, China

Received:2012-09-17 Revised:2012-11-27 Online:2013-04-01 Published:2013-04-01
Contact: Ma Xiao-Hua E-mail:xhma@xidian.edu.cn
Supported by:
Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915) and the National Natural Science Foundation of China (Grant Nos. 61106106 and 61204085).

摘要/Abstract

摘要： V-gate GaN high electron mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si₃N₄ recess etching technology. Compared with standard HMETs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco "ATLAS" for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs.

关键词: high electron mobility transistors, electric field distribution, field plate, current dispersion

Abstract: V-gate GaN high electron mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si₃N₄ recess etching technology. Compared with standard HMETs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco "ATLAS" for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs.

Key words: high electron mobility transistors, electric field distribution, field plate, current dispersion

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.61.Ey (III-V semiconductors) 85.30.Tv (Field effect devices)

张凯, 曹梦逸, 陈永和, 杨丽媛, 王冲, 马晓华, 郝跃. Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors[J]. 中国物理B, 2013, 22(5): 57304-057304.

Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Chen Yong-He (陈永和), Yang Li-Yuan (杨丽媛), Wang Chong (王冲), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors[J]. Chin. Phys. B, 2013, 22(5): 57304-057304.

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Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors

Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors

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