Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors
张凯, 曹梦逸, 陈永和, 杨丽媛, 王冲, 马晓华, 郝跃
Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Chen Yong-He (陈永和), Yang Li-Yuan (杨丽媛), Wang Chong (王冲), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)
中国物理B
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2013, (5): 57304
-057304
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DOI: 10.1088/1674-1056/22/5/057304