中国物理B ›› 2013, Vol. 22 ›› Issue (2): 27302-027302.doi: 10.1088/1674-1056/22/2/027302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

The fabrication and characterization of 4H SiC power UMOSFETs

宋庆文a b, 张玉明b, 韩吉胜c, Philip Tannerc, Sima Dimitrijevc d, 张义门b, 汤晓燕b, 郭辉b   

  1. a School of Technical Physics, Xidian University, Xi'an 710071, China;
    b Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;
    c Queensland Micro and Nanotechnology Center, Griffith University, Nathan 4111, Australia;
    d Griffith School of Engineering, Griffith University, Nathan 4111, Australia
  • 收稿日期:2012-08-22 修回日期:2012-11-19 出版日期:2013-01-01 发布日期:2013-01-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61176070 and 61274079); the Doctoral Fund of Ministry of Education of China (Grant No. 20110203110010); and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

The fabrication and characterization of 4H SiC power UMOSFETs

Song Qing-Wen (宋庆文)a b, Zhang Yu-Ming (张玉明)b, Han Ji-Sheng (韩吉胜)c, Philip Tannerc, Sima Dimitrijevc d, Zhang Yi-Men (张义门)b, Tang Xiao-Yan (汤晓燕)b, Guo Hui (郭辉)b   

  1. a School of Technical Physics, Xidian University, Xi'an 710071, China;
    b Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;
    c Queensland Micro and Nanotechnology Center, Griffith University, Nathan 4111, Australia;
    d Griffith School of Engineering, Griffith University, Nathan 4111, Australia
  • Received:2012-08-22 Revised:2012-11-19 Online:2013-01-01 Published:2013-01-01
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61176070 and 61274079); the Doctoral Fund of Ministry of Education of China (Grant No. 20110203110010); and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

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摘要： The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) is reported in this paper. The device has a 15-μm thick drift layer with 3×1015 cm-3 N-type doping concentration and a 3.1-μm channel length. The measured on-state source-drain current density is 65.4 A/cm2 at Vg=40 V and VDS=15 V. The measured threshold voltage (Vth) is 5.5 V by linear extrapolation from the transfer characteristics. A specific on-resistance (Rsp-on) is 181 mΩ·cm2 at Vg=40 V and a blocking voltage (BV) is 880 V (IDS=100 μA@880V) at Vg=0 V.

关键词: UMOSFETs, 4H-SiC, specific on-resistance, blocking voltage

Abstract: The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) is reported in this paper. The device has a 15-μm thick drift layer with 3×1015 cm-3 N-type doping concentration and a 3.1-μm channel length. The measured on-state source-drain current density is 65.4 A/cm2 at Vg=40 V and VDS=15 V. The measured threshold voltage (Vth) is 5.5 V by linear extrapolation from the transfer characteristics. A specific on-resistance (Rsp-on) is 181 mΩ·cm2 at Vg=40 V and a blocking voltage (BV) is 880 V (IDS=100 μA@880V) at Vg=0 V.

Key words: UMOSFETs, 4H-SiC, specific on-resistance, blocking voltage

中图分类号:  (Electronic transport in interface structures)

  • 73.40.-c
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.61.Le (Other inorganic semiconductors)