Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 18504-018504.doi: 10.1088/1674-1056/22/1/018504
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
陈峻a b, 范广涵b, 张运炎b
Chen Jun (陈峻)a b, Fan Guang-Han (范广涵)b, Zhang Yun-Yan (张运炎)b
摘要: The optical and physical properties of InGaN light-emitting diode (LED) with a specific design of staggered AlGaN electron-blocking layer (EBL) are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence (EL) intensity, internal quantum efficiency (IQE), and the output power are simulated. The results reveal that this specific design has a remarkable improvement of optical performance compared with the design of conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of LED could be one of the main reasons for these improvements.
中图分类号: (Light-emitting devices)