Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 18504-018504.doi: 10.1088/1674-1056/22/1/018504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Improvement of characteristics of InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

陈峻a b, 范广涵b, 张运炎b   

  1. a Experimental Teaching Department, Guangdong University of Technology, Guangzhou 510006, China;
    b Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631,China
  • 收稿日期:2012-05-12 修回日期:2012-06-18 出版日期:2012-12-01 发布日期:2012-12-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Fund for Strategic and Emerging Industries of Guangdong Province, China (Grant No. 2010A081002005), and the Project of Combination of Production and Research Guided by Ministry of Education, China (Grant No. 2010B090400192).

Improvement of characteristics of InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

Chen Jun (陈峻)a b, Fan Guang-Han (范广涵)b, Zhang Yun-Yan (张运炎)b   

  1. a Experimental Teaching Department, Guangdong University of Technology, Guangzhou 510006, China;
    b Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631,China
  • Received:2012-05-12 Revised:2012-06-18 Online:2012-12-01 Published:2012-12-01
  • Contact: Chen Jun E-mail:jun.cheng@yahoo.com.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Fund for Strategic and Emerging Industries of Guangdong Province, China (Grant No. 2010A081002005), and the Project of Combination of Production and Research Guided by Ministry of Education, China (Grant No. 2010B090400192).

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摘要： The optical and physical properties of InGaN light-emitting diode (LED) with a specific design of staggered AlGaN electron-blocking layer (EBL) are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence (EL) intensity, internal quantum efficiency (IQE), and the output power are simulated. The results reveal that this specific design has a remarkable improvement of optical performance compared with the design of conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of LED could be one of the main reasons for these improvements.

关键词: electron-blocking layer, light-emitting diodes, efficiency droop

Abstract: The optical and physical properties of InGaN light-emitting diode (LED) with a specific design of staggered AlGaN electron-blocking layer (EBL) are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence (EL) intensity, internal quantum efficiency (IQE), and the output power are simulated. The results reveal that this specific design has a remarkable improvement of optical performance compared with the design of conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of LED could be one of the main reasons for these improvements.

Key words: electron-blocking layer, light-emitting diodes, efficiency droop

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
85.50.-n (Dielectric, ferroelectric, and piezoelectric devices) 87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence)