Improvement of characteristics of InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

陈峻, 范广涵, 张运炎

Chen Jun (陈峻), Fan Guang-Han (范广涵), Zhang Yun-Yan (张运炎)

Chin. Phys. B . 2013, (1): 18504 -018504 . DOI: 10.1088/1674-1056/22/1/018504