A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

doi:10.1088/1674-1056/21/4/048502

中国物理B ›› 2012, Vol. 21 ›› Issue (4): 48502-048502.doi: 10.1088/1674-1056/21/4/048502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

任敏,李泽宏,邓光敏,张灵霞,张蒙,刘小龙,谢加雄,张波

收稿日期:2011-08-19 修回日期:2011-10-02 出版日期:2012-02-29 发布日期:2012-02-29
通讯作者: 任敏,renmin@uestc.edu.cn E-mail:renmin@uestc.edu.cn

A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

Ren Min(任敏)^†, Li Ze-Hong(李泽宏), Deng Guang-Min(邓光敏), Zhang Ling-Xia(张灵霞), Zhang Meng(张蒙), Liu Xiao-Long(刘小龙), Xie Jia-Xiong(谢加雄), and Zhang Bo(张波)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2011-08-19 Revised:2011-10-02 Online:2012-02-29 Published:2012-02-29
Contact: Ren Min,renmin@uestc.edu.cn E-mail:renmin@uestc.edu.cn
Supported by:
Project supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005), the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2010J038), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110185120005).

摘要/Abstract

Abstract: The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.

Key words: avalanche current path, unclamped inductive switching, superjunction, MOSFET

中图分类号: (Field effect devices)

85.30.Tv

85.30.De (Semiconductor-device characterization, design, and modeling)

任敏,李泽宏,邓光敏,张灵霞,张蒙,刘小龙,谢加雄,张波. [J]. 中国物理B, 2012, 21(4): 48502-048502.

Ren Min(任敏), Li Ze-Hong(李泽宏), Deng Guang-Min(邓光敏), Zhang Ling-Xia(张灵霞), Zhang Meng(张蒙), Liu Xiao-Long(刘小龙), Xie Jia-Xiong(谢加雄), and Zhang Bo(张波) . A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching[J]. Chin. Phys. B, 2012, 21(4): 48502-048502.

参考文献 16

[1]	Fischer K and Shenai K 1996 IEEE Trans. Electron Dev. 43 1007
[2]	Ji I H, Cho K H, Han M K, Lee S C, Kim S S, Oh K H and Yun C M 2008 Proceedings of the 20th International Symposium on Power Semiconductor Devices & ICs USA, May 18-22, 2008 p. 115
[3]	Olayiwola A, Ian K, George P, Keith H, Khalid K, Jim P, Adrian K and Philip R 2010 IEEE Trans. Electron Dev. 57 1651
[4]	Kocon C, Zeng J and Stokes R 2000 Proceedings of the 12th International Symposium on Power Semiconductor Devices & ICs, France May 22-25, 2000 p. 157
[5]	Zeng J and Wheatley C F 1999 Proceedings of the 11th International Symposium on Power Semiconductor Devices & ICs, Canada May 26-28, 1999 p. 205
[6]	Coe D J (U.S. Patent) 4 754 310 [1988-06-28]
[7]	Chen X B (U.S. Patent) 5 216 275 [1993-06-01]
[8]	Tihanyi J (U.S. Patent) 5 438 215 [1995-08-01]
[9]	Fujihira T 1997 Jpn. J. Appl. Phys. 36 6254
[10]	Li Z H, Ren M, Zhang B, Ma J, Hu T, Zhang S, Wang F and Chen J 2010 J. Semicond. 31 48
[11]	Duan B X, Zhang B and Li Z J 2007 Chin. Phys. 16 3754
[12]	Wang C L and Sun J 2009 Chin. Phys B. 18 1231
[13]	Roig J, Moens P, McDonald J, Vanmeerbeek P, Bauwens F and Tack M 2011 Proceedings of the 23th International Symposium on Power Semiconductor Devices & ICs, USA, May 23-26, 2011 p. 312
[14]	MEDICI User's Manual Avanti Corporation 2004
[15]	Fang J, Qiao M and Li Z J 2006 Acta Phys. Sin. 55 3656 (in Chinese)
[16]	Shenoy P M, Bhalla A and Dolny GM 1999 Proceedings of the 11th International Symposium on Power Semiconductor Devices and ICs, Canada, May 26-28, 1999 p. 99

A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 16

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Jin-Ping Zhang(张金平), Hao-Nan Deng(邓浩楠), Rong-Rong Zhu(朱镕镕), Ze-Hong Li(李泽宏), and Bo Zhang(张波). High performance carrier stored trench bipolar transistor with dual shielding structure[J]. 中国物理B, 2023, 32(3): 38501-038501.
[2]	Jie Wei(魏杰), Qinfeng Jiang(姜钦峰), Xiaorong Luo(罗小蓉), Junyue Huang(黄俊岳), Kemeng Yang(杨可萌), Zhen Ma(马臻), Jian Fang(方健), and Fei Yang(杨霏). High performance SiC trench-type MOSFET with an integrated MOS-channel diode[J]. 中国物理B, 2023, 32(2): 28503-028503.
[3]	Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504.
[4]	Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack[J]. 中国物理B, 2023, 32(1): 18503-018503.
[5]	Rui Yu(余睿), Zhe Sheng(盛喆), Wennan Hu(胡文楠), Yue Wang(王越), Jianguo Dong(董建国), Haoran Sun(孙浩然), Zengguang Cheng(程增光), and Zengxing Zhang(张增星). A field-effect WSe₂/Si heterojunction diode[J]. 中国物理B, 2023, 32(1): 18505-018505.
[6]	Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生). Degradation mechanisms for polycrystalline silicon thin-film transistors with a grain boundary in the channel under negative gate bias stress[J]. 中国物理B, 2022, 31(12): 128105-128105.
[7]	Zhi-Wen Shi(石智文), Zheng-Yu Ren(任征宇), Wei-Sheng Wang(王伟胜), Hui Xiao(肖惠), Yu-Heng Zeng(曾俞衡), and Li-Qiang Zhu(竺立强). Bioinspired tactile perception platform with information encryption function[J]. 中国物理B, 2022, 31(9): 98506-098506.
[8]	Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)^†. Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs[J]. 中国物理B, 2022, 31(9): 96101-096101.
[9]	Chenkai Zhu(朱晨凯), Linna Zhao(赵琳娜), Zhuo Yang(杨卓), and Xiaofeng Gu(顾晓峰). Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress[J]. 中国物理B, 2022, 31(9): 97303-097303.
[10]	Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇). Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases[J]. 中国物理B, 2022, 31(8): 88101-088101.
[11]	Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智). An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors[J]. 中国物理B, 2022, 31(6): 68502-068502.
[12]	Dong Zhang(张栋), Jianjun Song(宋建军), Xiaohuan Xue(薛笑欢), and Shiqi Zhang(张士琦). A high rectification efficiency Si_0.14Ge_0.72Sn_0.14–Ge_0.82Sn_0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission[J]. 中国物理B, 2022, 31(6): 68401-068401.
[13]	Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate[J]. 中国物理B, 2022, 31(6): 68501-068501.
[14]	Chunzao Wang(王春早), Baoxing Duan(段宝兴), Licheng Sun(孙李诚), and Yintang Yang(杨银堂). Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench[J]. 中国物理B, 2022, 31(4): 47304-047304.
[15]	Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching[J]. 中国物理B, 2022, 31(2): 27301-027301.