中国物理B ›› 2011, Vol. 20 ›› Issue (9): 94207-094207.doi: 10.1088/1674-1056/20/9/094207

• CLASSICAL AREAS OF PHENOMENOLOGY • 上一篇    下一篇

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

  

  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2010-09-06 修回日期:2011-04-19 出版日期:2011-09-15 发布日期:2011-09-15

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

Wang Yu-Zhou(王宇宙), Li Ding(李丁), Li Lei(李磊),Liu Ning-Yang(刘宁炀), Liu Lei(刘磊),Cao Wen-Yu(曹文彧), Chen Wei-Hua(陈伟华), and Hu Xiao-Dong(胡晓东)†   

  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • Received:2010-09-06 Revised:2011-04-19 Online:2011-09-15 Published:2011-09-15

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摘要： The influence of the width of a lattice-matched Al0.82In0.18N/GaN single quantum well (SQW) on the absorption coefficients and wavelength of the intersubband transition (ISBT) has been investigated by solving the Schrödinger and Poisson equations self-consistently. The wavelength of 1—2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 μm to 3.59 μm. The absorption coefficients of 1—2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1—3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 μm to near 2.11 μm. The absorption coefficients of 1—3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the Al0.82In0.18N/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.

Abstract: The influence of the width of a lattice-matched Al0.82In0.18N/GaN single quantum well (SQW) on the absorption coefficients and wavelength of the intersubband transition (ISBT) has been investigated by solving the Schrödinger and Poisson equations self-consistently. The wavelength of 1—2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 μm to 3.59 μm. The absorption coefficients of 1—2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1—3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 μm to near 2.11 μm. The absorption coefficients of 1—3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the Al0.82In0.18N/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.

Key words: Al0.82In0.18N/GaN single quantum well, optoelectronic devices, mid-infrared, intersubband transition

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
78.30.Fs (III-V and II-VI semiconductors) 42.70.Km (Infrared transmitting materials) 68.65.Fg (Quantum wells)