中国物理B ›› 2011, Vol. 20 ›› Issue (4): 48502-048502.doi: 10.1088/1674-1056/20/4/048502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers

张运炎, 范广涵   

  1. Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2010-10-10 修回日期:2010-11-28 出版日期:2011-04-15 发布日期:2011-04-15
  • 基金资助:
    Project supported by the Project of Combination of Production and Research Guided by Ministry in 2009, China (Grant No. 2009B090300338), the Doctorate Foundation of the State Education Ministry of China (Grant No. 350163) and the Crucial Field and Key Breakthrough Project of Guangdong Province and Hongkong, China (Grant No. 2007A010501008).

Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers

Zhang Yun-Yan(张运炎) and Fan Guang-Han(范广涵)†   

  1. Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • Received:2010-10-10 Revised:2010-11-28 Online:2011-04-15 Published:2011-04-15
  • Supported by:
    Project supported by the Project of Combination of Production and Research Guided by Ministry in 2009, China (Grant No. 2009B090300338), the Doctorate Foundation of the State Education Ministry of China (Grant No. 350163) and the Crucial Field and Key Breakthrough Project of Guangdong Province and Hongkong, China (Grant No. 2007A010501008).

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摘要： The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InAlN electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InAlN EBL performs better over a conventional LED with an AlGaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.

Abstract: The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InAlN electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InAlN EBL performs better over a conventional LED with an AlGaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.

Key words: InAlN electron-blocking layer, p-type doped barriers, numerical simulation, dual-wavelength LED

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
85.50.-n (Dielectric, ferroelectric, and piezoelectric devices) 87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence)