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Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers
张运炎, 范广涵
Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers
Zhang Yun-Yan(张运炎) and Fan Guang-Han(范广涵)
中国物理B . 2011, (
4
): 48502 -048502 . DOI: 10.1088/1674-1056/20/4/048502