中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37807-037807.doi: 10.1088/1674-1056/20/3/037807

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED

路慧敏, 陈根祥   

  1. Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044, China
  • 收稿日期:2010-03-12 修回日期:2010-11-26 出版日期:2011-03-15 发布日期:2011-03-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60777013), the Nature Science Foundation of Beijing, China (Grant No. 4082023), and the Excellent Doctoral Science and Technology Innovation Foundation of Beijing Jiaotong Un

Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED

Lu Hui-Min(路慧敏)† and Chen Gen-Xiang(陈根祥)   

  1. Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044, China
  • Received:2010-03-12 Revised:2010-11-26 Online:2011-03-15 Published:2011-03-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60777013), the Nature Science Foundation of Beijing, China (Grant No. 4082023), and the Excellent Doctoral Science and Technology Innovation Foundation of Beijing Jiaotong University, China (Grant No. 141063522).

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摘要： GaN-based irregular multiple quantum well (IMQW) structures assembled two different types of QWs emitting complementary wavelengths for dichromatic white light-emitting diodes (LEDs) are optimized in order to obtain near white light emissions. The hole distributions and spontaneous emission spectra of the IMQW structures are analysed in detail by fully considering the effects of strain, well-coupling, valence band-mixing and polarization effect through employing a newly developed theoretical model from the k·p theory. Several structure parameters such as well material component, well width, layout of the wells and the thickness of barrier between different types of QWs are employed to analyse how these parameters together with the polarization effect influence the electronic and the optical properties of IMQW structure. Numerical results show that uniform hole distributions in different types of QWs are obtained when the number of the QWs emitting blue light is two, the number of the QWs emitting yellow light is one and the barrier between different types of QWs is 8nm in thickness. The near white light emission is realized using GaN-based IMQW structure with appropriate design parameters and injection level.

Abstract: GaN-based irregular multiple quantum well (IMQW) structures assembled two different types of QWs emitting complementary wavelengths for dichromatic white light-emitting diodes (LEDs) are optimized in order to obtain near white light emissions. The hole distributions and spontaneous emission spectra of the IMQW structures are analysed in detail by fully considering the effects of strain, well-coupling, valence band-mixing and polarization effect through employing a newly developed theoretical model from the k·p theory. Several structure parameters such as well material component, well width, layout of the wells and the thickness of barrier between different types of QWs are employed to analyse how these parameters together with the polarization effect influence the electronic and the optical properties of IMQW structure. Numerical results show that uniform hole distributions in different types of QWs are obtained when the number of the QWs emitting blue light is two, the number of the QWs emitting yellow light is one and the barrier between different types of QWs is 8nm in thickness. The near white light emission is realized using GaN-based IMQW structure with appropriate design parameters and injection level.

Key words: irregular multiple quantum wells, GaN-based, white LED

中图分类号:  (Quantum wells)

  • 78.67.De
78.66.Fd (III-V semiconductors)