Semiconductor-metal transition in GaAs nanowires under high pressure

doi:10.1088/1674-1056/28/7/076401

中国物理B ›› 2019, Vol. 28 ›› Issue (7): 76401-076401.doi: 10.1088/1674-1056/28/7/076401

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Semiconductor-metal transition in GaAs nanowires under high pressure

1 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
2 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2019-02-18 修回日期:2019-04-06 出版日期:2019-07-05 发布日期:2019-07-05
通讯作者: Peng Wang, Dong Pan E-mail:wangpengtrrs@jlu.edu.cn;pandong@semi.ac.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2018YFA0305900), the National Natural Science Foundation of China (Grant No. 11604116), Beijing Municipal Natural Science Foundation, China (Grant No. 1192017), and Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2017156).

Semiconductor-metal transition in GaAs nanowires under high pressure

Yi-Lan Liang(梁艺蓝)¹, Zhen Yao(姚震)¹, Xue-Tong Yin(殷雪彤)¹, Peng Wang(王鹏)¹, Li-Xia Li(李利霞)², Dong Pan(潘东)², Hai-Yan Li(李海燕)¹, Quan-Jun Li(李全军)¹, Bing-Bing Liu(刘冰冰)¹, Jian-Hua Zhao(赵建华)²

1 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
2 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2019-02-18 Revised:2019-04-06 Online:2019-07-05 Published:2019-07-05
Contact: Peng Wang, Dong Pan E-mail:wangpengtrrs@jlu.edu.cn;pandong@semi.ac.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2018YFA0305900), the National Natural Science Foundation of China (Grant No. 11604116), Beijing Municipal Natural Science Foundation, China (Grant No. 1192017), and Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2017156).

摘要/Abstract

摘要：

We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at room temperature. The zinc-blende to orthorhombic phase transition was observed at around 20.0 GPa. In the same pressure range, pressure-induced metallization of GaAs nanowires was confirmed by infrared reflectance spectra. The metallization originates from the zinc-blende to orthorhombic phase transition. Decompression results demonstrated that the phase transition from zinc-blende to orthorhombic and the pressure-induced metallization are reversible. Compared to bulk materials, GaAs nanowires show larger bulk modulus and enhanced transition pressure due to the size effects and high surface energy.

关键词: GaAs nanowires, high pressure, structural transition, x-ray diffraction

Abstract:

Key words: GaAs nanowires, high pressure, structural transition, x-ray diffraction

中图分类号: (Structural transitions in nanoscale materials)

64.70.Nd

91.60.Gf (High-pressure behavior) 63.22.Gh (Nanotubes and nanowires) 61.05.cp (X-ray diffraction)

梁艺蓝, 姚震, 殷雪彤, 王鹏, 李利霞, 潘东, 李海燕, 李全军, 刘冰冰, 赵建华. Semiconductor-metal transition in GaAs nanowires under high pressure[J]. 中国物理B, 2019, 28(7): 76401-076401.

Yi-Lan Liang(梁艺蓝), Zhen Yao(姚震), Xue-Tong Yin(殷雪彤), Peng Wang(王鹏), Li-Xia Li(李利霞), Dong Pan(潘东), Hai-Yan Li(李海燕), Quan-Jun Li(李全军), Bing-Bing Liu(刘冰冰), Jian-Hua Zhao(赵建华). Semiconductor-metal transition in GaAs nanowires under high pressure[J]. Chin. Phys. B, 2019, 28(7): 76401-076401.

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Semiconductor-metal transition in GaAs nanowires under high pressure

Semiconductor-metal transition in GaAs nanowires under high pressure

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