中国物理B ›› 2021, Vol. 30 ›› Issue (10): 106103-106103.doi: 10.1088/1674-1056/ac1416

所属专题： SPECIAL TOPIC — Ion beam modification of materials and applications

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Investigations on ion implantation-induced strain in rotated Y-cut LiNbO3 and LiTaO3

Zhongxu Li(李忠旭)1,3,†, Kai Huang(黄凯)1,4,†, Yanda Ji(吉彦达)2, Yang Chen(陈阳)1,3, Xiaomeng Zhao(赵晓蒙)1,4, Min Zhou(周民)1, Tiangui You(游天桂)1, Shibin Zhang(张师斌)1, and Xin Ou(欧欣)1,3,‡   

  1. 1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences(CAS), Shanghai 200050, China;
    2 MIIT Key Laboratory of Aerospace Information Materials and Physics&College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China;
    3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    4 Shanghai Novel Silicon Integration Technology Co., Ltd., Jiading, Shanghai, China
  • 收稿日期:2021-06-08 修回日期:2021-07-07 接受日期:2021-07-14 发布日期:2021-10-09
  • 通讯作者: Xin Ou E-mail:ouxin@mail.sim.ac.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2019YFB1803902), the National Natural Science Foundation of China (Grant Nos. 11905282, 61874128, 61851406, 11705262, and 6187407), the Frontier Science Key Program of CAS (Grant Nos. QYZDY-SSW-JSC032 and ZDBS-LY-JSC009), Chinese-Austrian Cooperative Research and Development Project (Grant No. GJHZ201950), the Program of Shanghai Academic Research Leader (Grant No. 19XD1404600), K. C. Wong Education Foundation (Grant No. GJTD-2019-11), Shanghai Sailing Program (Grant Nos. 19YF1456200 and 19YF1456400), Shanghai Science and Technology Innovation Action Plan Program (Grant No. 19XD1404600).

Investigations on ion implantation-induced strain in rotated Y-cut LiNbO3 and LiTaO3

Zhongxu Li(李忠旭)1,3,†, Kai Huang(黄凯)1,4,†, Yanda Ji(吉彦达)2, Yang Chen(陈阳)1,3, Xiaomeng Zhao(赵晓蒙)1,4, Min Zhou(周民)1, Tiangui You(游天桂)1, Shibin Zhang(张师斌)1, and Xin Ou(欧欣)1,3,‡   

  1. 1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences(CAS), Shanghai 200050, China;
    2 MIIT Key Laboratory of Aerospace Information Materials and Physics&College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China;
    3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    4 Shanghai Novel Silicon Integration Technology Co., Ltd., Jiading, Shanghai, China
  • Received:2021-06-08 Revised:2021-07-07 Accepted:2021-07-14 Published:2021-10-09
  • Contact: Xin Ou E-mail:ouxin@mail.sim.ac.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2019YFB1803902), the National Natural Science Foundation of China (Grant Nos. 11905282, 61874128, 61851406, 11705262, and 6187407), the Frontier Science Key Program of CAS (Grant Nos. QYZDY-SSW-JSC032 and ZDBS-LY-JSC009), Chinese-Austrian Cooperative Research and Development Project (Grant No. GJHZ201950), the Program of Shanghai Academic Research Leader (Grant No. 19XD1404600), K. C. Wong Education Foundation (Grant No. GJTD-2019-11), Shanghai Sailing Program (Grant Nos. 19YF1456200 and 19YF1456400), Shanghai Science and Technology Innovation Action Plan Program (Grant No. 19XD1404600).

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摘要： The monocrystalline LiNbO3 (LN) and LiTaO3 (LT) plates have been qualified as a kind of material platform for high performance RF filter that is considerable for the 5G communication. LN and LT thin films are usually transferred on handle wafers by combining ion-slicing and wafer bonding technique to form a piezoelectric on insulator (POI) substrate. The ion implantation is a key process and the implantation-induced strain is essential for the layer transfer. Here, we reported the strain profile of ion implanted rotated Y-cut LN and LT. The ion implantation generates the out-of-plane tensile strain of the sample surface and (006) plane, while both the tensile and compressive strain are observed on the (030) plane. The implanted ions redistributed due to the anisotropy of LN and LT, and induce the main tensile normal to the (006) plane. Meanwhile, the (030) planes are contracted due to the Poisson effect with the interstitial ions disturbing and mainly show a compressive strain profile.

关键词: x-ray diffraction (XRD), implantation, strain, piezoelectric

Abstract: The monocrystalline LiNbO3 (LN) and LiTaO3 (LT) plates have been qualified as a kind of material platform for high performance RF filter that is considerable for the 5G communication. LN and LT thin films are usually transferred on handle wafers by combining ion-slicing and wafer bonding technique to form a piezoelectric on insulator (POI) substrate. The ion implantation is a key process and the implantation-induced strain is essential for the layer transfer. Here, we reported the strain profile of ion implanted rotated Y-cut LN and LT. The ion implantation generates the out-of-plane tensile strain of the sample surface and (006) plane, while both the tensile and compressive strain are observed on the (030) plane. The implanted ions redistributed due to the anisotropy of LN and LT, and induce the main tensile normal to the (006) plane. Meanwhile, the (030) planes are contracted due to the Poisson effect with the interstitial ions disturbing and mainly show a compressive strain profile.

Key words: x-ray diffraction (XRD), implantation, strain, piezoelectric

中图分类号:  (Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))

  • 61.72.Hh
85.40.Ry (Impurity doping, diffusion and ion implantation technology) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)