Improved charge trapping flash device with Al
2O
3/HfSiO stack as blocking layer
郑志威, 霍宗亮, 朱晨昕, 许中广, 刘璟, 刘明
Improved charge trapping flash device with Al
2O
3/HfSiO stack as blocking layer
Zheng Zhi-Wei(郑志威), Huo Zong-Liang(霍宗亮), Zhu Chen-Xin(朱晨昕), Xu Zhong-Guang(许中广), Liu Jing(刘璟), and Liu Ming(刘明)
中国物理B
.
2011, (10): 108501
-108501
.
DOI: 10.1088/1674-1056/20/10/108501