High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification

doi:10.1088/1674-1056/19/3/037106

中国物理B ›› 2010, Vol. 19 ›› Issue (3): 37106-037106.doi: 10.1088/1674-1056/19/3/037106

High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification

邢菲菲¹, 曹进², 洪飞², 顾文², 郭新安², 张浩², 魏斌², 张建华², 王军²

(1)Chemistry Department, College of Sciences, Shanghai University, Shanghai 200444, China; (2)Key Laboratory of Advanced Display and System Application (Shanghai University) and Special Display Technology (Hefei University of Technology), Ministry of Education, Shanghai 200072, China

收稿日期:2009-05-29 修回日期:2009-06-10 出版日期:2010-03-15 发布日期:2010-03-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No.~60806007), the Shanghai `Post-Qi-Ming-Xing Plan' for Young Scientists, China (Grant No.~07QA14023), and the Shanghai Committee of Science and Technology (Grant Nos.~08DZ1140702 and 08520511200).

High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification

Cao Jin(曹进)^a), Hong Fei(洪飞)^a), Xing Fei-Fei(邢菲菲)^b), Gu Wen(顾文)^a), Guo Xin-An(郭新安)^a), Zhang Hao(张浩)^a), Wei Bin(魏斌)^a), Zhang Jian-Hua(张建华)^a), and Wang Jun(王军)^a)^†

^a Key Laboratory of Advanced Display and System Application (Shanghai University) and Special Display Technology (Hefei University of Technology), Ministry of Education, Shanghai 200072, China; ^b Chemistry Department, College of Sciences, Shanghai University, Shanghai 200444, China

Received:2009-05-29 Revised:2009-06-10 Online:2010-03-15 Published:2010-03-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No.~60806007), the Shanghai `Post-Qi-Ming-Xing Plan' for Young Scientists, China (Grant No.~07QA14023), and the Shanghai Committee of Science and Technology (Grant Nos.~08DZ1140702 and 08520511200).

摘要/Abstract

摘要： This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafluorophthalocyaninatocopper (F₁₆CuPc)/copper phthalocyanine (CuPc) and F₁₆CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081~cm²/(V.s) was obtained from F₁₆CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F₁₆CuPc/CuPc-based transistor is better than that of F₁₆CuPc/pentacene. This is attributed to the morphologic match of two organic components.

Abstract: This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafluorophthalocyaninatocopper (F₁₆CuPc)/copper phthalocyanine (CuPc) and F₁₆CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081 cm²/(V.s) was obtained from F₁₆CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F₁₆CuPc/CuPc-based transistor is better than that of F₁₆CuPc/pentacene. This is attributed to the morphologic match of two organic components.

Key words: n-channel, heterojunction effect, surface modification

中图分类号: (Field effect devices)

85.30.Tv

73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 68.37.Ps (Atomic force microscopy (AFM))

曹进, 洪飞, 邢菲菲, 顾文, 郭新安, 张浩, 魏斌, 张建华, 王军. High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification[J]. 中国物理B, 2010, 19(3): 37106-037106.

Cao Jin(曹进), Hong Fei(洪飞), Xing Fei-Fei(邢菲菲), Gu Wen(顾文), Guo Xin-An(郭新安), Zhang Hao(张浩), Wei Bin(魏斌), Zhang Jian-Hua(张建华), and Wang Jun(王军). High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification[J]. Chin. Phys. B, 2010, 19(3): 37106-037106.

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High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification

High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification

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