Time delay in InGaN multiple quantum well laser diodes at room temperature

doi:10.1088/1674-1056/19/12/124211

中国物理B ›› 2010, Vol. 19 ›› Issue (12): 124211-124211.doi: 10.1088/1674-1056/19/12/124211

Time delay in InGaN multiple quantum well laser diodes at room temperature

季莲¹, 江德生¹, 张书明¹, 刘宗顺¹, 曾畅¹, 赵德刚¹, 朱建军¹, 王辉¹, 段俐宏¹, 杨辉²

(1)State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China; (2)Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

收稿日期:2010-03-11 修回日期:2010-04-26 出版日期:2010-12-15 发布日期:2010-12-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60976045, 60506001, 60836003 and 60776047), the National Basic Research Program of China (Grant No. 2007CB936700), and the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017).

Time delay in InGaN multiple quantum well laser diodes at room temperature

Ji Lian(季莲)^a)†, Jiang De-Sheng(江德生)^a), Zhang Shu-Ming(张书明)^a), Liu Zong-Shun(刘宗顺)^a), Zeng Chang(曾畅)^a), Zhao De-Gang(赵德刚)^a), Zhu Jian-Jun(朱建军)^a), Wang Hui(王辉)^a), Duan Li-Hong(段俐宏)^a), and Yang Hui(杨辉)^b)

^a State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China; ^b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2010-03-11 Revised:2010-04-26 Online:2010-12-15 Published:2010-12-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60976045, 60506001, 60836003 and 60776047), the National Basic Research Program of China (Grant No. 2007CB936700), and the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017).

摘要/Abstract

摘要： This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes. The delay time decreases as the pumping current increases, and the speed of the delay time reduction becomes slower as the current amplitude increases further. Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrate than those on sapphire. It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action. The traps can be bleached by capturing injected carriers. The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes.

Abstract: This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes. The delay time decreases as the pumping current increases, and the speed of the delay time reduction becomes slower as the current amplitude increases further. Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrate than those on sapphire. It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action. The traps can be bleached by capturing injected carriers. The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes.

Key words: InGaN, laser diode, delay effect, saturable absorber, traps

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

42.60.By (Design of specific laser systems) 42.60.Lh (Efficiency, stability, gain, and other operational parameters) 42.65.Re (Ultrafast processes; optical pulse generation and pulse compression)

季莲, 江德生, 张书明, 刘宗顺, 曾畅, 赵德刚, 朱建军, 王辉, 段俐宏, 杨辉. Time delay in InGaN multiple quantum well laser diodes at room temperature[J]. 中国物理B, 2010, 19(12): 124211-124211.

Ji Lian(季莲), Jiang De-Sheng(江德生), Zhang Shu-Ming(张书明), Liu Zong-Shun(刘宗顺), Zeng Chang(曾畅), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Wang Hui(王辉), Duan Li-Hong(段俐宏), and Yang Hui(杨辉). Time delay in InGaN multiple quantum well laser diodes at room temperature[J]. Chin. Phys. B, 2010, 19(12): 124211-124211.

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Time delay in InGaN multiple quantum well laser diodes at room temperature

Time delay in InGaN multiple quantum well laser diodes at room temperature

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