Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy

doi:10.1088/1674-1056/19/11/116801

中国物理B ›› 2010, Vol. 19 ›› Issue (11): 116801-117101.doi: 10.1088/1674-1056/19/11/116801

Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy

任凡, 郝智彪, 胡健楠, 张辰, 罗毅

Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

收稿日期:2010-03-24 修回日期:2010-05-11 出版日期:2010-11-15 发布日期:2010-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60536020 and 60723002), the National Basic Research Program of China (Grant Nos. 2006CB302800 and 2006CB921106), the National High Technology Research and Development Program for Advanced Materials of China (Grant No. 2006AA03A105), and the Major Project of Beijing Municipal Science and Technology Commission, China (Grant No. D0404003040321).

Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy

Ren Fan(任凡), Hao Zhi-Biao(郝智彪)^†, Hu Jian-Nan(胡健楠), Zhang Chen(张辰), and Luo Yi(罗毅)

Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Received:2010-03-24 Revised:2010-05-11 Online:2010-11-15 Published:2010-11-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60536020 and 60723002), the National Basic Research Program of China (Grant Nos. 2006CB302800 and 2006CB921106), the National High Technology Research and Development Program for Advanced Materials of China (Grant No. 2006AA03A105), and the Major Project of Beijing Municipal Science and Technology Commission, China (Grant No. D0404003040321).

摘要/Abstract

摘要： In this paper, the effects of thickness of AlN nucleation layer grown at high temperature on AlN epi-layer crystalline quality are investigated. Crack-free AlN samples with various nucleation thicknesses are grown on sapphire substrates by plasma-assisted molecular beam epitaxy. The AlN crystalline quality is analysed by transmission electron microscope and x-ray diffraction (XRD) rocking curves in both (002) and (102) planes. The surface profiles of nucleation layer with different thicknesses after in-situ annealing are also analysed by atomic force microscope. A critical nucleation thickness for realising high quality AlN films is found. When the nucleation thickness is above a certain value, the (102) XRD full width at half maximum (FWHM) of AlN bulk increases with nucleation thickness increasing, whereas the (002) XRD FWHM shows an opposite trend. These phenomena can be attributed to the characteristics of nucleation islands and the evolution of crystal grains during AlN main layer growth.

Abstract: In this paper, the effects of thickness of AlN nucleation layer grown at high temperature on AlN epi-layer crystalline quality are investigated. Crack-free AlN samples with various nucleation thicknesses are grown on sapphire substrates by plasma-assisted molecular beam epitaxy. The AlN crystalline quality is analysed by transmission electron microscope and x-ray diffraction (XRD) rocking curves in both (002) and (102) planes. The surface profiles of nucleation layer with different thicknesses after in-situ annealing are also analysed by atomic force microscope. A critical nucleation thickness for realising high quality AlN films is found. When the nucleation thickness is above a certain value, the (102) XRD full width at half maximum (FWHM) of AlN bulk increases with nucleation thickness increasing, whereas the (002) XRD FWHM shows an opposite trend. These phenomena can be attributed to the characteristics of nucleation islands and the evolution of crystal grains during AlN main layer growth.

Key words: aluminum nitride, plasma-assisted molecular beam epitaxy, nucleation layer

中图分类号: (Plasma-based ion implantation and deposition)

52.77.Dq

68.37.Lp (Transmission electron microscopy (TEM)) 68.55.-a (Thin film structure and morphology) 68.55.A- (Nucleation and growth) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

任凡, 郝智彪, 胡健楠, 张辰, 罗毅. Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy[J]. 中国物理B, 2010, 19(11): 116801-117101.

Ren Fan(任凡), Hao Zhi-Biao(郝智彪), Hu Jian-Nan(胡健楠), Zhang Chen(张辰), and Luo Yi(罗毅). Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy[J]. Chin. Phys. B, 2010, 19(11): 116801-117101.

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Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy

Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy

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