Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

doi:10.1088/1674-1056/19/10/107302

中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107302-107302.doi: 10.1088/1674-1056/19/10/107302

Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

李劲, 刘红侠, 李斌, 曹磊, 袁博

Key Laboratory for Wide Bandgap Semiconductor Devices, Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2010-01-18 修回日期:2010-05-11 出版日期:2010-10-15 发布日期:2010-10-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 200807010010).

Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

Li Jin(李劲)^†, Liu Hong-Xia(刘红侠), Li Bin(李斌), Cao Lei(曹磊), and Yuan Bo(袁博)

Key Laboratory for Wide Bandgap Semiconductor Devices, Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2010-01-18 Revised:2010-05-11 Online:2010-10-15 Published:2010-10-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 200807010010).

摘要/Abstract

摘要： Based on the exact resultant solution of two-dimensional Poisson's equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor (CMOS)-based device in a nanoscale regime.

Abstract: Based on the exact resultant solution of two-dimensional Poisson's equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor (CMOS)-based device in a nanoscale regime.

Key words: strained-Si, gate stack double-gate MOSFETs, short channel effect, the drain-induced barrier-lowering

中图分类号: (Elemental semiconductors)

71.20.Mq

73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.40.-c (Electronic transport in interface structures) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)

李劲, 刘红侠, 李斌, 曹磊, 袁博. Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs[J]. 中国物理B, 2010, 19(10): 107302-107302.

Li Jin(李劲), Liu Hong-Xia(刘红侠), Li Bin(李斌), Cao Lei(曹磊), and Yuan Bo(袁博). Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs[J]. Chin. Phys. B, 2010, 19(10): 107302-107302.

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Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

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