中国物理B ›› 1994, Vol. 3 ›› Issue (4): 250-254.doi: 10.1088/1004-423X/3/4/002

• GENERAL • 上一篇    下一篇

NANO-CRYSTALLINE SILICON FILMS PRODUCED BY LAYER-BY-LAYER DEPOSITION TECHNIQUE AND THEIR NOVEL PROPERTIES

陈茂瑞, 陈坤基   

  1. Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
  • 收稿日期:1993-05-04 出版日期:1994-04-20 发布日期:1994-04-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

NANO-CRYSTALLINE SILICON FILMS PRODUCED BY LAYER-BY-LAYER DEPOSITION TECHNIQUE AND THEIR NOVEL PROPERTIES

CHEN MAO-RUI (陈茂瑞), CHEN KUN-JI (陈坤基)   

  1. Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
  • Received:1993-05-04 Online:1994-04-20 Published:1994-04-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： We have applied the layer-by-layer deposition technique to the growth of nano-crystalline silicon films by varying the hydrogen plasma exposure time. The tailoring effect of hydrogen plasma has been studied, The novel optical and electronic proper-ties of these films have also been reported.

Abstract: We have applied the layer-by-layer deposition technique to the growth of nano-crystalline silicon films by varying the hydrogen plasma exposure time. The tailoring effect of hydrogen plasma has been studied, The novel optical and electronic proper-ties of these films have also been reported.

中图分类号:  (Methods of micro- and nanofabrication and processing)

  • 81.16.-c
68.55.A- (Nucleation and growth) 52.77.Dq (Plasma-based ion implantation and deposition) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.66.Db (Elemental semiconductors and insulators) 71.20.Mq (Elemental semiconductors)