中国物理B ›› 2009, Vol. 18 ›› Issue (9): 4007-4012.doi: 10.1088/1674-1056/18/9/065

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Structural, electrical and optical characterization of InGaN layers grown by MOVPE

Bosi M1, ?ztürk M Kemal2, Y1ld1z A3, ?z?elik S4, Kasap M4   

  1. (1)IMEM-CNR Institute, Area delle Scienze 37/A, I-43010 Fontanini, Parma, Italy; (2)Mineral Analysis and Technology Department, MTA, 06520 Ankara - Turkey; (3)Physics Department, University of Ahi Evran, Asikpasa Kampusu, 40040, Kirsehir, Turkey; (4)Physics Department, University of Gazi, 06500 Teknikokullar, Ankara, Turkey
  • 收稿日期:2008-02-11 修回日期:2008-08-24 出版日期:2009-09-20 发布日期:2009-09-20
  • 基金资助:
    Project supported by the State Planning Organization of Turkey (Grant No 2001K120590).

Structural, electrical and optical characterization of InGaN layers grown by MOVPE

Yildiz Aa), Öztürk M Kemalb)†, Bosi Mc), Özçelik Sd), and Kasap Md)   

  1. a Physics Department, University of Ahi Evran, Asikpasa Kampusu, 40040, Kirsehir, Turkey; b Mineral Analysis and Technology Department, MTA, 06520 Ankara - Turkey; c IMEM-CNR Institute, Area delle Scienze 37/A, I-43010 Fontanini, Parma, Italy; d Physics Department, University of Gazi, 06500 Teknikokullar, Ankara, Turkey
  • Received:2008-02-11 Revised:2008-08-24 Online:2009-09-20 Published:2009-09-20
  • Supported by:
    Project supported by the State Planning Organization of Turkey (Grant No 2001K120590).

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摘要： We present a study on n-type ternary InGaN layers grown by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) on GaN template/(0001) sapphire substrate. An investigation of the different growth conditions on n-type InxGa_1-xN (x=0.06-0.135) alloys was done for a series of five samples. The structural, electrical and optical properties were characterized by high resolution x-ray diffraction (HRXRD), Hall effect and photoluminescence (PL). Experimental results showed that different growth conditions, namely substrate rotation (SR) and change of total H2 flow (THF), strongly affect the properties of InGaN layers. This case can be clearly observed from the analytical results. When the SR speed decreased, the HRXRD scan peak of the samples shifted along a higher angle. Therefore, increasing the SR speed changed important structural properties of InGaN alloys such as peak broadening, values of strain, lattice parameters and defects including tilt, twist and dislocation density. From PL results it is observed that the growth conditions can be changed to control the emission wavelength and it is possible to shift the emission wavelength towards the green. Hall effect measurement has shown that the resistivity of the samples changes dramatically when THF changes.

关键词: InGaN, MOVPE, substrate rotation, total H2 flow

Abstract: We present a study on n-type ternary InGaN layers grown by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) on GaN template/(0001) sapphire substrate. An investigation of the different growth conditions on n-type InxGa1-xN (x = 0.06-0.135) alloys was done for a series of five samples. The structural, electrical and optical properties were characterized by high resolution x-ray diffraction (HRXRD), Hall effect and photoluminescence (PL). Experimental results showed that different growth conditions, namely substrate rotation (SR) and change of total H2 flow (THF), strongly affect the properties of InGaN layers. This case can be clearly observed from the analytical results. When the SR speed decreased, the HRXRD scan peak of the samples shifted along a higher angle. Therefore, increasing the SR speed changed important structural properties of InGaN alloys such as peak broadening, values of strain, lattice parameters and defects including tilt, twist and dislocation density. From PL results it is observed that the growth conditions can be changed to control the emission wavelength and it is possible to shift the emission wavelength towards the green. Hall effect measurement has shown that the resistivity of the samples changes dramatically when THF changes.

Key words: InGaN, MOVPE, substrate rotation, total H2 flow

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
68.55.A- (Nucleation and growth) 73.61.Ey (III-V semiconductors) 78.55.Cr (III-V semiconductors) 78.66.Fd (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))