中国物理B ›› 2009, Vol. 18 ›› Issue (8): 3568-3572.doi: 10.1088/1674-1056/18/8/072
田雪雁, 徐征, 赵谡玲, 张福俊, 袁广才, 徐叙瑢
Tian Xue-Yan(田雪雁), Xu Zheng(徐征)†, Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才), and Xu Xu-Rong(徐叙瑢)
摘要: This paper investigates the effects of concentration on the crystalline structure, the morphology, and the charge carrier mobility of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs). The RR-P3HT FETs with RR-P3HT as an active layer with different concentrations of RR-P3HT solution from 0.5~wt% to 2~wt% are prepared. The results indicate that the performance of RR-P3HT FETs improves drastically with the increase of RR-P3HT weight percentages in chloroform solution due to the formation of more microcrystalline lamellae and bigger nanoscale islands. It finds that the field-effect mobility of RR-P3HT FET with 2~wt% can reach 5.78× 10^-3~cm2/Vs which is higher by a factor of 13 than that with 0.5~wt%. Further, an appropriate thermal annealing is adopted to improve the performance of RR-P3HT FETs. The field-effect mobility of RR-P3HT FETs increases drastically to 0.09~cm2/Vs by thermal annealing at 150~℃, and the value of on/off current ratio can reach 10^4.
中图分类号: (Field effect devices)