中国物理B ›› 2009, Vol. 18 ›› Issue (8): 3530-3534.doi: 10.1088/1674-1056/18/8/065

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Study of top and bottom contact resistance in one organic field-effect transistor

刘舸, 刘明, 王宏, 商立伟, 姬濯宇, 刘兴华, 柳江   

  1. Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2008-12-30 修回日期:2009-02-11 出版日期:2009-08-20 发布日期:2009-08-20
  • 基金资助:
    Project supported by National Basic Research Program of China (973 Program) (Grant No 2006CB806204) and National Natural Science Foundation of China (Grant Nos 60676001, 60676008 and 60825403).

Study of top and bottom contact resistance in one organic field-effect transistor

Liu Ge(刘舸), Liu Ming(刘明)†, Wang Hong(王宏), Shang Li-Wei(商立伟), Ji Zhuo-Yu(姬濯宇), Liu Xing-Hua(刘兴华), and Liu Jiang(柳江)   

  1. Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2008-12-30 Revised:2009-02-11 Online:2009-08-20 Published:2009-08-20
  • Supported by:
    Project supported by National Basic Research Program of China (973 Program) (Grant No 2006CB806204) and National Natural Science Foundation of China (Grant Nos 60676001, 60676008 and 60825403).

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摘要： This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.

Abstract: This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.

Key words: organic field-effect transistor, top contact geometry, bottom contact geometry, hybrid contact geometry

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.40.Cg (Contact resistance, contact potential)