中国物理B ›› 2009, Vol. 18 ›› Issue (5): 1931-1934.doi: 10.1088/1674-1056/18/5/034
张林, 张义门, 张玉明, 韩超, 马永吉
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉)
摘要: This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes (SBDs) were fabricated and irradiated with 1~MeV electrons up to a dose of 3.43×1014~e/cm2. After radiation, the Schottky barrier height φ B of the Ni/4H-SiC SBD increased from 1.20~eV to 1.21~eV, but decreased from 0.95~eV to 0.94~eV for the Ti/4H-SiC SBD. The degradation of φ B could be explained by interface states of changed Schottky contacts. The on-state resistance RS of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, φ B of the diodes recovered completely after one week, and the RS partly recovered.
中图分类号: (Surface barrier, boundary, and point contact devices)