中国物理B ›› 2009, Vol. 18 ›› Issue (5): 1931-1934.doi: 10.1088/1674-1056/18/5/034

• • 上一篇    下一篇

High energy electron radiation effect on Ni and Ti/4H-SiCSchottky barrier diode at room temperature

张林, 张义门, 张玉明, 韩超, 马永吉   

  1. Microelectronic School, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2008-10-29 修回日期:2008-11-11 出版日期:2009-05-20 发布日期:2009-05-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60606022), the Xian Applied Materials Foundation of China (Grant No XA-AM-200702) and the Advanced Research Foundation of China (Grant No 9140A08050508).

High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diode at room temperature

Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉)   

  1. Microelectronic School, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2008-10-29 Revised:2008-11-11 Online:2009-05-20 Published:2009-05-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60606022), the Xian Applied Materials Foundation of China (Grant No XA-AM-200702) and the Advanced Research Foundation of China (Grant No 9140A08050508).

PDF (PC)

715

赞

摘要： This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes (SBDs) were fabricated and irradiated with 1~MeV electrons up to a dose of 3.43×1014~e/cm2. After radiation, the Schottky barrier height φ B of the Ni/4H-SiC SBD increased from 1.20~eV to 1.21~eV, but decreased from 0.95~eV to 0.94~eV for the Ti/4H-SiC SBD. The degradation of φ B could be explained by interface states of changed Schottky contacts. The on-state resistance RS of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, φ B of the diodes recovered completely after one week, and the RS partly recovered.

关键词: silicon carbide, Schottky barrier diode, electron radiation, annealing effect

Abstract: This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes (SBDs) were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43×1014 e/cm2. After radiation, the Schottky barrier height $\phi _{\rm B} $ of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD. The degradation of $\phi _{\rm B} $ could be explained by interface states of changed Schottky contacts. The on-state resistance RS of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, $\phi _{\rm B} $ of the diodes recovered completely after one week, and the RS partly recovered.

Key words: silicon carbide, Schottky barrier diode, electron radiation, annealing effect

中图分类号:  (Surface barrier, boundary, and point contact devices)

  • 85.30.Hi
85.30.Kk (Junction diodes) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 61.80.Fe (Electron and positron radiation effects) 61.72.Cc (Kinetics of defect formation and annealing)