High energy electron radiation effect on Ni and Ti/4H-SiCSchottky barrier diode at room temperature
张林, 张义门, 张玉明, 韩超, 马永吉
High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diode at room temperature
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉)
中国物理B . 2009, (5): 1931 -1934 .  DOI: 10.1088/1674-1056/18/5/034