中国物理B ›› 2009, Vol. 18 ›› Issue (4): 1674-1678.doi: 10.1088/1674-1056/18/4/066

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The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells

李贵君, 侯国付, 韩晓艳, 袁育洁, 魏长春, 孙建, 赵颖, 耿新华   

  1. Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University, Tianjin 300071, China; Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, China; Key Laboratory of Opto-Electronic Information Science and Technology, Tianjin 300071, China
  • 收稿日期:2008-05-30 修回日期:2008-08-22 出版日期:2009-04-20 发布日期:2009-04-20
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant Nos 2006CB202602 and 2006CB202603), and the National Natural Science Foundation of China (Grant No 60506003).

The study of a new n/p tunnel recombination junction and its application in a-Si:H/$\mu$c-Si:H tandem solar cells

Li Gui-Jun(李贵君), Hou Guo-Fu(侯国付)†, Han Xiao-Yan(韩晓艳), Yuan Yu-Jie(袁育洁), Wei Chang-Chun(魏长春), Sun Jian(孙建), Zhao Yin(赵颖), and Geng Xin-Hua(耿新华)   

  1. Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University, Tianjin 300071, China Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, China Key Laboratory of Opto-Electronic Information Sci
  • Received:2008-05-30 Revised:2008-08-22 Online:2009-04-20 Published:2009-04-20
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant Nos 2006CB202602 and 2006CB202603), and the National Natural Science Foundation of China (Grant No 60506003).

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摘要： This paper reports that a double N layer (a-Si:H/μc-Si:H) is used to substitute the single microcrystalline silicon n layer (n-μc-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current--voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.

关键词: double N layer, tunnel recombination junction, oxidation interface, a-Si:H/\muc-Si:H tandem solar cell

Abstract: This paper reports that a double N layer (a-Si:H/$\mu$c-Si:H) is used to substitute the single microcrystalline silicon n layer (n-$\mu$c-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/$\mu$c-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current--voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/$\mu$c-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.

Key words: double N layer, tunnel recombination junction, oxidation interface, a-Si:H/$\mu$c-Si:H tandem solar cell

中图分类号:  (Tunneling)

  • 73.40.Gk
73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 73.61.Jc (Amorphous semiconductors; glasses) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 84.60.Jt (Photoelectric conversion)