中国物理B ›› 2009, Vol. 18 ›› Issue (4): 1674-1678.doi: 10.1088/1674-1056/18/4/066
李贵君, 侯国付, 韩晓艳, 袁育洁, 魏长春, 孙建, 赵颖, 耿新华
Li Gui-Jun(李贵君), Hou Guo-Fu(侯国付)†, Han Xiao-Yan(韩晓艳), Yuan Yu-Jie(袁育洁), Wei Chang-Chun(魏长春), Sun Jian(孙建), Zhao Yin(赵颖), and Geng Xin-Hua(耿新华)
摘要: This paper reports that a double N layer (a-Si:H/μc-Si:H) is used to substitute the single microcrystalline silicon n layer (n-μc-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current--voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.
中图分类号: (Tunneling)