中国物理B ›› 2009, Vol. 18 ›› Issue (4): 1679-1683.doi: 10.1088/1674-1056/18/4/067
李洁1, 陈莺飞1, 李绍1, 王佳1, 郑东宁1, 解廷月2, 王萍3
Wang Ping(王萍)a)b), Li Jie(李洁)b), Chen Ying-Fei(陈莺飞)b), Li Shao(李绍)b), Wang Jia(王佳)b), Xie Ting-Yue(解廷月)a), and Zheng Dong-Ning(郑东宁)b)†
摘要: Highly epitaxial YBa2Cu3O7 - δ (YBCO) and yttria-stabilized zirconia (YSZ) bilayer thin films have been deposited on silicon-on-insulator (SOI) substrates by using in situ pulsed laser deposition (PLD) technique. In the experiment, the native amorphous SiO2 layers on some of the SOI substrates are removed by dipping them in a 10% HF solution for 15 s. Comparing several qualities of films grown on substrates with or without HF pretreatment, such as thin film crystallinity, general surface roughness, temperature dependence of resistance, surface morphology, as well as average crack spacing and crack width, naturally leads to the conclusion that preserving the native SiO2 layer on the surface of the SOI substrate can not only simplify the experimental process but can also achieve fairly high quality YSZ and YBCO thin films.
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