中国物理B ›› 2008, Vol. 17 ›› Issue (8): 3077-3082.doi: 10.1088/1674-1056/17/8/051

• • 上一篇    下一篇

Quantum compact model for thin-body double-gate Schottky barrier MOSFETs

栾苏珍, 刘红侠   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor\\ Materials and Devices, Xi'an 710071, China
  • 出版日期:2008-08-20 发布日期:2008-08-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60206006), the Program for New Century Excellent Talents of Ministry of Education of China (Grant No NCET-05-085) and the Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200701).

Quantum compact model for thin-body double-gate Schottky barrier MOSFETs

Luan Su-Zhen(栾苏珍)a)b)† and Liu Hong-Xia(刘红侠)a)b)   

  1. aSchool of Microelectronics, Xidian University, Xi'an 710071, China; b Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor\\ Materials and Devices, Xi'an 710071, China
  • Online:2008-08-20 Published:2008-08-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60206006), the Program for New Century Excellent Talents of Ministry of Education of China (Grant No NCET-05-085) and the Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200701).

PDF (PC)

443

赞

摘要： Nanoscale Schottky barrier metal oxide semiconductor field-effect transistors (MOSFETs) are explored by using quantum mechanism effects for thin-body devices. The results suggest that for small nonnegative Schottky barrier heights, even for zero barrier height, the tunnelling current also plays a role in the total on-state current. Owing to the thin body of device, quantum confinement raises the electron energy levels in the silicon, and the tradeoff takes place between the quantum confinement energy and Schottky barrier lowering (SBL). It is concluded that the inclusion of the quantum mechanism effect in this model, which considers an infinite rectangular well with a first-order perturbation in the channel, can lead to the good agreement with numerical result for thin silicon film. The error increases with silicon thickness increasing.

关键词: Schottky barrier, quantum mechanism effects, effective mass, electron density

Abstract: Nanoscale Schottky barrier metal oxide semiconductor field-effect transistors (MOSFETs) are explored by using quantum mechanism effects for thin-body devices. The results suggest that for small nonnegative Schottky barrier heights, even for zero barrier height, the tunnelling current also plays a role in the total on-state current. Owing to the thin body of device, quantum confinement raises the electron energy levels in the silicon, and the tradeoff takes place between the quantum confinement energy and Schottky barrier lowering (SBL). It is concluded that the inclusion of the quantum mechanism effect in this model, which considers an infinite rectangular well with a first-order perturbation in the channel, can lead to the good agreement with numerical result for thin silicon film. The error increases with silicon thickness increasing.

Key words: Schottky barrier, quantum mechanism effects, effective mass, electron density

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.40.Gk (Tunneling) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))