中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1370-1373.doi: 10.1088/1009-1963/15/6/040

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

n-type ZnS used as electron transport material in organic light-emitting diodes

杜鹏, 张希清, 孙学柏, 姚志刚, 王永生   

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education,China;Institute of Optoelectronic Technology, Beijing Jiaotong University,Beijing 100044, China
  • 收稿日期:2005-11-21 修回日期:2006-01-09 出版日期:2006-06-20 发布日期:2006-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60476005), the Scientific Research Foundation for Returned Overseas Chinese Scholars, the State Education Ministry, the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No 2003CB314707), and the Key Project of National Natural Science Foundation of China (Grant No 50532090).

n-type ZnS used as electron transport material in organic light-emitting diodes

Du Peng (杜鹏), Zhang Xi-Qing (张希清), Sun Xue-Bai (孙学柏), Yao Zhi-Gang (姚志刚), Wang Yong-Sheng (王永生)   

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education,China;Institute of Optoelectronic Technology, Beijing Jiaotong University,Beijing 100044, China
  • Received:2005-11-21 Revised:2006-01-09 Online:2006-06-20 Published:2006-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60476005), the Scientific Research Foundation for Returned Overseas Chinese Scholars, the State Education Ministry, the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No 2003CB314707), and the Key Project of National Natural Science Foundation of China (Grant No 50532090).

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摘要： This paper reports on the n-type ZnS used as electron transport layer for the organic light-emitting diodes (OLEDs). The naphthyl-substituted benzidine derivative (NPB) and tris (8-hydroxyquinoline) aluminium (Alq$_{3})$ are used as the hole transport layer and the emitting layer respectively. The insertion of the n-type ZnS layer enhances the electron injection in the OLEDs. The study was carried out on OLEDs of structures: indium--tin-oxide (ITO)/NPB/Alq$_{3}$/ZnS/LiF/AL, ITO/NPB/Alq$_{3}$/LiF/AL and ITO/NPB/Alq$_{3}$/AL. The luminance and efficiency of the device containing this electron transport layer are increased significantly over those obtained from conventional devices due to better carrier balance.

Abstract: This paper reports on the n-type ZnS used as electron transport layer for the organic light-emitting diodes (OLEDs). The naphthyl-substituted benzidine derivative (NPB) and tris (8-hydroxyquinoline) aluminium (Alq$_{3})$ are used as the hole transport layer and the emitting layer respectively. The insertion of the n-type ZnS layer enhances the electron injection in the OLEDs. The study was carried out on OLEDs of structures: indium--tin-oxide (ITO)/NPB/Alq$_{3}$/ZnS/LiF/AL, ITO/NPB/Alq$_{3}$/LiF/AL and ITO/NPB/Alq$_{3}$/AL. The luminance and efficiency of the device containing this electron transport layer are increased significantly over those obtained from conventional devices due to better carrier balance.

Key words: OLEDs, n-type ZnS, electron transport layer, luminance, efficiency

中图分类号:  (Electroluminescence)

  • 78.60.Fi
72.80.Ey (III-V and II-VI semiconductors) 73.40.-c (Electronic transport in interface structures) 85.60.Jb (Light-emitting devices)