INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING

doi:10.1088/1009-1963/10/10/315

中国物理B ›› 2001, Vol. 10 ›› Issue (10): 966-969.doi: 10.1088/1009-1963/10/10/315

INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING

高斐¹, 黄大定², 李建平², 孔梅影², 曾一平², 李晋闽², 林兰英², 黄昌俊³

(1)Department of Physics, Shaanxi Normal University, Xi'an 710062, China; Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (3)State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2001-03-15 修回日期:2001-05-31 出版日期:2001-10-15 发布日期:2005-06-12
基金资助:
Project supported by the Key Program in the National "Ninth Five-Year" Plan, China (Grant No. 97-763-02-02).

INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING

Gao Fei (高斐)^ac, Huang Chang-jun (黄昌俊)^b, Huang Da-ding (黄大定)^c, Li Jian-ping (李建平)^c, Kong Mei-ying (孔梅影)^c, Zeng Yi-ping (曾一平)^c, Li Jin-min (李晋闽)^c, Lin Lan-ying (林兰英)^c

^a Department of Physics, Shaanxi Normal University, Xi'an 710062, China; ^b State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; ^c Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2001-03-15 Revised:2001-05-31 Online:2001-10-15 Published:2005-06-12
Supported by:
Project supported by the Key Program in the National "Ninth Five-Year" Plan, China (Grant No. 97-763-02-02).

摘要/Abstract

摘要： Self-assembled Ge islands were grown on Si(100) substrate by Si₂H₆-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands.

Abstract: Self-assembled Ge islands were grown on Si(100) substrate by Si₂H₆-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands.

Key words: Ge islands, chemical etching, photoluminescence, Si₂H₆-Ge molecular beam epitaxy

中图分类号: (Elemental semiconductors)

78.55.Ap

81.65.Cf (Surface cleaning, etching, patterning) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 68.55.-a (Thin film structure and morphology) 78.66.Db (Elemental semiconductors and insulators)

高斐, 黄昌俊, 黄大定, 李建平, 孔梅影, 曾一平, 李晋闽, 林兰英. INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING[J]. 中国物理B, 2001, 10(10): 966-969.

Gao Fei (高斐), Huang Chang-jun (黄昌俊), Huang Da-ding (黄大定), Li Jian-ping (李建平), Kong Mei-ying (孔梅影), Zeng Yi-ping (曾一平), Li Jin-min (李晋闽), Lin Lan-ying (林兰英). INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING[J]. Chinese Physics, 2001, 10(10): 966-969.

[1]	刘智, 何超, 张东亮, 李传波, 薛春来, 左玉华, 成步文. Temperature dependent direct-bandgap light emission and optical gain of Ge[J]. 中国物理B, 2016, 25(5): 57804-057804.
[2]	黄仕华, 刘剑. Structural and electrical characterization of annealed Si_1-xC_x/SiC thin film prepared by magnetron sputtering[J]. 中国物理B, 2014, 23(5): 58105-058105.
[3]	任胜东, 李斌成, 高丽峰, 王谦. Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers[J]. 中国物理B, 2013, 22(5): 57202-057202.
[4]	王茺, 杨宇, 杨瑞东, 李亮, 熊飞, Bao Ji-Ming. Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure[J]. 中国物理B, 2011, 20(2): 26802-026802.
[5]	杨宇, 王茺, 杨瑞东, 李亮, 熊飞. Photoluminescence evolution in self-ion-implanted and annealed silicon[J]. 中国物理B, 2009, 18(11): 4906-4911.
[6]	黄伟其, 吕泉, 张荣涛, 王晓允, 于示强. Localized electronic states in gaps on hole-net structures of silicon[J]. 中国物理B, 2009, 18(11): 5066-5071.
[7]	黄伟其, 王海旭, 金峰, 秦朝建. Trap states in oxidation layer of nanocrystal Si[J]. 中国物理B, 2008, 17(10): 3753-3758.
[8]	肖志松, 徐飞, 张通和, 程国安, 谢大韬, 顾岚岚. INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION[J]. 中国物理B, 2001, 10(7): 650-654.
[9]	季振国, Norikata Usami, H. Sunamura, Yasuhiro Shiraki. PHOTOLUMINESCENCE AND RAMAN SCATTERING OF PURE GERMANIUM/SILICON SHORT PERIOD SUPERLATTICE[J]. 中国物理B, 1998, 7(8): 608-612.
[10]	高婷, 鲍希茂, 阎锋, 佟嵩, 陈逸郡. VIOLET LIGHT-EMISSION FROM Ge⁺-IMPLANTED SiO₂ FILMS ON Si SUBSTRATE[J]. 中国物理B, 1997, 6(6): 466-470.
[11]	唐文国, 龚涛, 李自元, 刘湘娜, 何宇亮. PHOTOLUMINESCENCE PROPERTIES OF NANO-SIZE CRYSTALLINE SILICON FILMS[J]. 中国物理B, 1993, 2(10): 776-781.

INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING

INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 11

Metrics

本文评价

推荐阅读 0