中国物理B ›› 2013, Vol. 22 ›› Issue (5): 57202-057202.doi: 10.1088/1674-1056/22/5/057202

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Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

任胜东a b, 李斌成a, 高丽峰a, 王谦a b   

  1. a Institute of Optics and Electronics, Chinese Academy of Sciences, Sichuan 610209, China;
    b University of the Chinese Academy of Sciences, Beijing 100039, China
  • 收稿日期:2012-11-05 修回日期:2012-12-03 出版日期:2013-04-01 发布日期:2013-04-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60676058 and 61076090).

Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

Ren Sheng-Dong (任胜东)ab, Li Bin-Cheng (李斌成)a, Gao Li-Feng (高丽峰)a, Wang Qian(王谦)ab   

  1. a Institute of Optics and Electronics, Chinese Academy of Sciences, Sichuan 610209, China;
    b University of the Chinese Academy of Sciences, Beijing 100039, China
  • Received:2012-11-05 Revised:2012-12-03 Online:2013-04-01 Published:2013-04-01
  • Contact: Li Bin-Cheng E-mail:bcli@ioe.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60676058 and 61076090).

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摘要： A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+, P+, and As+ ion implantation at doses ranging from 1×1011 cm-2 to 1×1016 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and lifetime extracted from the transient PCR signals.

关键词: photocarrier radiometry, ion implantation, effective lifetime, silicon

Abstract: A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+, P+, and As+ ion implantation at doses ranging from 1×1011 cm-2 to 1×1016 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and lifetime extracted from the transient PCR signals.

Key words: photocarrier radiometry, ion implantation, effective lifetime, silicon

中图分类号:  (Charge carriers: generation, recombination, lifetime, and trapping)

  • 72.20.Jv
78.55.Ap (Elemental semiconductors) 73.20.Hb (Impurity and defect levels; energy states of adsorbed species) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)