中国物理B ›› 2011, Vol. 20 ›› Issue (2): 26802-026802.doi: 10.1088/1674-1056/20/2/026802

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Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure

Bao Ji-Ming1, 王茺2, 李亮2, 熊飞2, 杨宇3, 杨瑞东4   

  1. (1)Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204, USA; (2)Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; (3)Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204, USA; (4)Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; Departm
  • 收稿日期:2010-04-20 修回日期:2010-07-31 出版日期:2011-02-15 发布日期:2011-02-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 10964016), the Key Project of the Chinese Ministry of Education (Grant No. 210207), and the Natural Science Foundation of Yunnan University (Grant No. 2009E27Q).

Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure

Wang Chong(王茺)a)†,Yang Yu(杨宇)a)b)‡, Yang Rui-Dong(杨瑞东)a)c), Li Liang(李亮)a), Xiong Fei(熊飞)a),and Bao Ji-Mingb)   

  1. a Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; b Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204, USA; c Department of Physics, Honghe University, Mengzi 661100, Yunnan Province, China
  • Received:2010-04-20 Revised:2010-07-31 Online:2011-02-15 Published:2011-02-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 10964016), the Key Project of the Chinese Ministry of Education (Grant No. 210207), and the Natural Science Foundation of Yunnan University (Grant No. 2009E27Q).

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摘要： This paper reports that the Si+ self-ion-implantation are conducted on the silicon-on-insulator wafers with the 28Si+ doses of 7×1012, 1×1013, 4×1013, and 3×1014 cm-2, respectively. After the suitable annealing, these samples are characterized by using the photoluminescence technique at different recorded temperatures. Plentiful emission peaks are observed in these implanted silicon-on-insulator samples, including the unwonted intense P' band which exhibits a great potential in the optoelectronic application. These results indicate that severe transformation of the interstitial clusters can be manipulated by the implanting dose at suitable annealing temperatures. The high critical temperatures for the photoluminescence intensity growth of the two signatures are well discussed based on the thermal ionization model of free exciton.

关键词: self-ion-implantation, photoluminescence, interstitial cluster, silicon-on-insulator

Abstract: This paper reports that the Si+ self-ion-implantation are conducted on the silicon-on-insulator wafers with the 28Si+ doses of 7×1012, 1×1013, 4×1013, and 3×1014 cm-2, respectively. After the suitable annealing, these samples are characterized by using the photoluminescence technique at different recorded temperatures. Plentiful emission peaks are observed in these implanted silicon-on-insulator samples, including the unwonted intense P' band which exhibits a great potential in the optoelectronic application. These results indicate that severe transformation of the interstitial clusters can be manipulated by the implanting dose at suitable annealing temperatures. The high critical temperatures for the photoluminescence intensity growth of the two signatures are well discussed based on the thermal ionization model of free exciton.

Key words: self-ion-implantation, photoluminescence, interstitial cluster, silicon-on-insulator

中图分类号:  (Composition, segregation; defects and impurities)

  • 68.35.Dv
78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures) 78.55.Ap (Elemental semiconductors)