PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

doi:10.1088/1009-1963/9/6/008

中国物理B ›› 2000, Vol. 9 ›› Issue (6): 442-444.doi: 10.1088/1009-1963/9/6/008

PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

李志锋¹, 陆卫¹, 徐骏², 马天夫², 李伟², 陈坤基²

(1)State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (2)State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China

收稿日期:1999-12-05 修回日期:2000-01-10 出版日期:2000-06-15 发布日期:2005-06-12
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 59802004) and by the Natural Science Foundation of Jiangsu Province, China (Grant No. BK99047).

PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

Xu Jun (徐骏)^a, Ma Tian-fu (马天夫)^a, Li Wei (李伟)^a, Chen Kun-ji (陈坤基)^a, Li Zhi-feng (李志锋)^b, Lu Wei (陆卫)^b

^a State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China; ^b State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Received:1999-12-05 Revised:2000-01-10 Online:2000-06-15 Published:2005-06-12
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 59802004) and by the Natural Science Foundation of Jiangsu Province, China (Grant No. BK99047).

摘要/Abstract

摘要： Hydrogenated amorphous silicon carbide (a-SiC:H) films were grown by using an organic source, xylene (C₈H₁₀), instead of methane (CH₄) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was increased gradually by changing the gas ratio of C₈H₁₀ to SiH₄. The film with high optical band gap was soft and polymer-like and intense photoluminescence were obtained. Room temperature electro-luminescence was also achieved with peak energy at 2.05 eV (600 nm) for the a-SiC:H film with optical band gap of 3.2 eV.

Abstract: Hydrogenated amorphous silicon carbide (a-SiC:H) films were grown by using an organic source, xylene (C₈H₁₀), instead of methane (CH₄) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was increased gradually by changing the gas ratio of C₈H₁₀ to SiH₄. The film with high optical band gap was soft and polymer-like and intense photoluminescence were obtained. Room temperature electro-luminescence was also achieved with peak energy at 2.05 eV (600 nm) for the a-SiC:H film with optical band gap of 3.2 eV.

中图分类号: (Plasma-based ion implantation and deposition)

52.77.Dq

71.20.Nr (Semiconductor compounds) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 78.55.Qr (Amorphous materials; glasses and other disordered solids) 78.60.Fi (Electroluminescence) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

徐骏, 马天夫, 李伟, 陈坤基, 李志锋, 陆卫. PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE[J]. 中国物理B, 2000, 9(6): 442-444.

Xu Jun (徐骏), Ma Tian-fu (马天夫), Li Wei (李伟), Chen Kun-ji(陈坤基), Li Zhi-feng(李志锋), Lu Wei (陆卫). PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE[J]. Chinese Physics, 2000, 9(6): 442-444.

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PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

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