中国物理B ›› 2000, Vol. 9 ›› Issue (6): 442-444.doi: 10.1088/1009-1963/9/6/008
李志锋1, 陆卫1, 徐骏2, 马天夫2, 李伟2, 陈坤基2
Xu Jun (徐骏)a, Ma Tian-fu (马天夫)a, Li Wei (李伟)a, Chen Kun-ji (陈坤基)a, Li Zhi-feng (李志锋)b, Lu Wei (陆卫)b
摘要: Hydrogenated amorphous silicon carbide (a-SiC:H) films were grown by using an organic source, xylene (C8H10), instead of methane (CH4) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was increased gradually by changing the gas ratio of C8H10 to SiH4. The film with high optical band gap was soft and polymer-like and intense photoluminescence were obtained. Room temperature electro-luminescence was also achieved with peak energy at 2.05 eV (600 nm) for the a-SiC:H film with optical band gap of 3.2 eV.
中图分类号: (Plasma-based ion implantation and deposition)