中国物理B ›› 2000, Vol. 9 ›› Issue (6): 442-444.doi: 10.1088/1009-1963/9/6/008

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PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

李志锋1, 陆卫1, 徐骏2, 马天夫2, 李伟2, 陈坤基2   

  1. (1)State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (2)State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • 收稿日期:1999-12-05 修回日期:2000-01-10 出版日期:2000-06-15 发布日期:2005-06-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 59802004) and by the Natural Science Foundation of Jiangsu Province, China (Grant No. BK99047).

PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

Xu Jun (徐骏)a, Ma Tian-fu (马天夫)a, Li Wei (李伟)a, Chen Kun-ji (陈坤基)a, Li Zhi-feng (李志锋)b, Lu Wei (陆卫)b   

  1. a State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China; b State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received:1999-12-05 Revised:2000-01-10 Online:2000-06-15 Published:2005-06-12
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 59802004) and by the Natural Science Foundation of Jiangsu Province, China (Grant No. BK99047).

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摘要： Hydrogenated amorphous silicon carbide (a-SiC:H) films were grown by using an organic source, xylene (C8H10), instead of methane (CH4) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was increased gradually by changing the gas ratio of C8H10 to SiH4. The film with high optical band gap was soft and polymer-like and intense photoluminescence were obtained. Room temperature electro-luminescence was also achieved with peak energy at 2.05 eV (600 nm) for the a-SiC:H film with optical band gap of 3.2 eV.

Abstract: Hydrogenated amorphous silicon carbide (a-SiC:H) films were grown by using an organic source, xylene (C8H10), instead of methane (CH4) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was increased gradually by changing the gas ratio of C8H10 to SiH4. The film with high optical band gap was soft and polymer-like and intense photoluminescence were obtained. Room temperature electro-luminescence was also achieved with peak energy at 2.05 eV (600 nm) for the a-SiC:H film with optical band gap of 3.2 eV.

中图分类号:  (Plasma-based ion implantation and deposition)

  • 52.77.Dq
71.20.Nr (Semiconductor compounds) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 78.55.Qr (Amorphous materials; glasses and other disordered solids) 78.60.Fi (Electroluminescence) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))