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Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙). Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell[J]. 中国物理B, 2023, 32(1): 17801-017801. |
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Yi Zhang(张一), Cheng-Ao Yang(杨成奥), Jin-Ming Shang(尚金铭), Yi-Hang Chen(陈益航), Tian-Fang Wang(王天放), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Bing Liu(刘冰), and Zhi-Chuan Niu(牛智川). GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers[J]. 中国物理B, 2021, 30(9): 94204-094204. |
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Chen Yue(岳琛), Xian-Sheng Tang(唐先胜), Yang-Feng Li(李阳锋), Wen-Qi Wang(王文奇), Xin-Xin Li(李欣欣), Jun-Yang Zhang(张珺玚), Zhen Deng(邓震), Chun-Hua Du(杜春花), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Wei Lu(陆卫), Yang Jiang(江洋), and Hong Chen(陈弘). Enhanced absorption process in the thin active region of GaAs based p-i-n structure[J]. 中国物理B, 2021, 30(9): 97803-097803. |
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李妍, 桑新柱. Mid-infrared supercontinuum generation and its application on all-optical quantization with different input pulses[J]. 中国物理B, 2019, 28(5): 54206-054206. |
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余丁, 沈桂英, 谢辉, 刘京明, 孙静, 赵有文. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal[J]. 中国物理B, 2019, 28(5): 57102-057102. |
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尚金铭, 冯健, 杨成奥, 谢圣文, 张一, 佟存柱, 张宇, 牛智川. High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy[J]. 中国物理B, 2019, 28(3): 34202-034202. |
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谢圣文, 张宇, 杨成奥, 黄书山, 袁野, 张一, 尚金铭, 邵福会, 徐应强, 倪海桥, 牛智川. High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars[J]. 中国物理B, 2019, 28(1): 14208-014208. |
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王海龙, 张晓涵, 王红霞, 黎斌, 陈冲, 李永贤, 颜欢, 吴志盛, 江灏. Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas[J]. 中国物理B, 2018, 27(12): 127805-127805. |
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张一, 邵福会, 杨成奥, 谢圣文, 黄书山, 袁野, 尚金铭, 张宇, 徐应强, 倪海桥, 牛智川. Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm[J]. 中国物理B, 2018, 27(12): 124207-124207. |
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刘双韬, 杨静, 赵德刚, 江德生, 梁锋, 陈平, 朱建军, 刘宗顺, 刘炜, 邢瑶, 彭莉媛, 张立群, 王文杰, 李沫. Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures[J]. 中国物理B, 2018, 27(12): 127803-127803. |
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赵斌, 胡巍, 唐先胜, 霍雯雪, 韩丽丽, 赵明龙, 马紫光, 王文新, 贾海强, 陈弘. Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate[J]. 中国物理B, 2018, 27(4): 47803-047803. |
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唐静, 许秀来. Magneto-optical properties of self-assembled InAs quantum dots for quantum information processing[J]. 中国物理B, 2018, 27(2): 27804-027804. |
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刘双韬, 赵德刚, 杨静, 江德生, 梁锋, 陈平, 朱建军, 刘宗顺, 李翔, 刘炜, 邢瑶, 张立群. The residual C concentration control for low temperature growth p-type GaN[J]. 中国物理B, 2017, 26(10): 107102-107102. |
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白永彪, 赵有文, 沈桂英, 陈晓玉, 刘京明, 谢晖, 董志远, 杨俊, 杨凤云, 王凤华. N-type GaSb single crystals with high below-band gap transmission[J]. 中国物理B, 2017, 26(10): 107801-107801. |
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薛永洲, 陈泽升, 倪海桥, 牛智川, 江德生, 窦秀明, 孙宝权. Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm[J]. 中国物理B, 2017, 26(8): 84202-084202. |