中国物理B ›› 1998, Vol. 7 ›› Issue (3): 209-213.doi: 10.1088/1004-423X/7/3/008

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

STUDY OF MICROSTRUCTURE AND ELECTROLUMINESCENCE OF ZINC SULFIDE THIN FILM

柳兆洪, 王余姜, 陈谋智, 陈振湘, 孙书农, 黄美纯   

  1. Department of Physics, Xiamen University, Xiamen 361005, China
  • 收稿日期:1997-03-18 出版日期:1998-03-20 发布日期:1998-03-20
  • 基金资助:
    Project supported by the Natural Science Foundation of Fujian Province.

STUDY OF MICROSTRUCTURE AND ELECTROLUMINESCENCE OF ZINC SULFIDE THIN FILM

LIU ZHAO-HONG (柳兆洪), WANG YU-JIANG (王余姜), CHEN MOU-ZHI (陈谋智), CHEN ZHEN-XIANG (陈振湘), SUN SHU-NONG (孙书农), HUANG MEI-CHUN (黄美纯)   

  1. Department of Physics, Xiamen University, Xiamen 361005, China
  • Received:1997-03-18 Online:1998-03-20 Published:1998-03-20
  • Supported by:
    Project supported by the Natural Science Foundation of Fujian Province.

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摘要： The electroluminscent zinc sulfide thin film doped with erbium, fabri cated by thermal evaporation with two boats, are examined. The surface and internal electronic states of ZnS thin film are measured by means of X-ray diffracti on and X-ray photoemission spectroscopy. The information on the relations between electroluminescent characteristics and internal electronic states of the film is obtained. And the effects of the microstructure of thin film doped with rare earth erbium on electroluminescence are discussed as well.

Abstract: The electroluminscent zinc sulfide thin film doped with erbium, fabri cated by thermal evaporation with two boats, are examined. The surface and internal electronic states of ZnS thin film are measured by means of X-ray diffracti on and X-ray photoemission spectroscopy. The information on the relations between electroluminescent characteristics and internal electronic states of the film is obtained. And the effects of the microstructure of thin film doped with rare earth erbium on electroluminescence are discussed as well.

中图分类号:  (II-VI semiconductors)

  • 78.66.Hf
78.60.Fi (Electroluminescence) 68.55.-a (Thin film structure and morphology) 79.60.Bm (Clean metal, semiconductor, and insulator surfaces) 71.20.Nr (Semiconductor compounds)