中国物理B ›› 1997, Vol. 6 ›› Issue (10): 771-779.doi: 10.1088/1004-423X/6/10/009

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A MICROSCOPIC MECHANISM OF LOW TEMPERATURE HELIUM RELEASE

芶成玲1, 王佩璇1, 方正知1, 夏宗璜2, 沈定予2, 王雪梅2   

  1. (1)Department of Materials Physics, Beijing University of Science and Technology, Beijing 100083, China; (2)Department of Technical Physics, Peking University, Beijing 100871, China
  • 收稿日期:1996-08-13 出版日期:1997-10-20 发布日期:1997-10-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

A MICROSCOPIC MECHANISM OF LOW TEMPERATURE HELIUM RELEASE

GOU CHENG-LING (芶成玲)a, WANG PEI-XUAN (王佩璇)a, FANG ZHENG-ZHI (方正知)a, XIA ZONG-HUANG (夏宗璜)b, SHEN DING-YU (沈定予)b, WANG XUE-MEI (王雪梅)b   

  1. a Department of Materials Physics, Beijing University of Science and Technology, Beijing 100083, China; b Department of Technical Physics, Peking University, Beijing 100871, China
  • Received:1996-08-13 Online:1997-10-20 Published:1997-10-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： 4He ions of various energies and at various doses were implanted into three kinds of samples: TiH2 films, high purity Ti pieces as-received and after hydrogenation. Thermal release of helium was monitored in situ by proton-enhanced backscattering. Low-temperature helium release was observed at T≤573K. Single jump model was used to calculate the active energies for the release. Based on the observations, a mechanism of helium cluster vacancy complex (HemVn-Vi) for low temperature helium release is proposed.

Abstract: 4He ions of various energies and at various doses were implanted into three kinds of samples: TiH2 films, high purity Ti pieces as-received and after hydrogenation. Thermal release of helium was monitored in situ by proton-enhanced backscattering. Low-temperature helium release was observed at T≤573K. Single jump model was used to calculate the active energies for the release. Based on the observations, a mechanism of helium cluster vacancy complex (HemVn-Vi) for low temperature helium release is proposed.

中图分类号:  (Ion radiation effects)

  • 61.80.Jh
61.82.Ms (Insulators) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy) 68.55.A- (Nucleation and growth)