中国物理B ›› 1996, Vol. 5 ›› Issue (9): 705-712.doi: 10.1088/1004-423X/5/9/009

• • 上一篇    

EFFECTS OF BANDGAP SHRINKAGE IN FEMTOSECOND ABSORPTION SATURATION MEASUREMENTS OF GaAs FILM

皮飞鹏1, 陈忠2, 胡湘威2, 赖天树2, 徐耕2, 莫党2, 林位株3   

  1. (1)Department of Physics, Guangzhou Teachers College, Guangzhou 510400, China; (2)Department of Physics, Zhongshan University, Guangzhou 510275, China; (3)Department of Physics, Zhongshan University, Guangzhou 510275, China;State Key Laboratory of Ultrafast Laser Spectroscopy, Zhongshan University, Guangzhou 510275, China
  • 收稿日期:1995-05-24 出版日期:1996-09-20 发布日期:1996-09-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

EFFECTS OF BANDGAP SHRINKAGE IN FEMTOSECOND ABSORPTION SATURATION MEASUREMENTS OF GaAs FILM

CHEN ZHONG (陈忠)a, PI FEI-PENG (皮飞鹏)c, HU XIANG-WEI (胡湘威)a, LAI TIAN-SHU (赖天树)a, XU GENG (徐耕)a, MO DANG (莫党)a, LIN WEI-ZHU (林位株)ab   

  1. a Department of Physics, Zhongshan University, Guangzhou 510275, China; b State Key Laboratory of Ultrafast Laser Spectroscopy, Zhongshan University, Guangzhou 510275, China; c Department of Physics, Guangzhou Teachers College, Guangzhou 510400, China
  • Received:1995-05-24 Online:1996-09-20 Published:1996-09-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： Using CPM dye laser and self-mode-locked Ti sapphire laser as pump-probe optical sources, the effects of bandfilling and bandgap shrinkage on the femtosecond absorption saturation spectra of GaAs film have been studied, For exciting photon energy of 1.97eV and carrier density of 1×1018cm-3, an optical-induced absorption increase is observed and is attributed to bandgap shrinkage, The dependence of the absorption coefficient change on the carrier temperature and the carrier densities is discussed.

Abstract: Using CPM dye laser and self-mode-locked Ti sapphire laser as pump-probe optical sources, the effects of bandfilling and bandgap shrinkage on the femtosecond absorption saturation spectra of GaAs film have been studied, For exciting photon energy of 1.97eV and carrier density of 1×1018cm-3, an optical-induced absorption increase is observed and is attributed to bandgap shrinkage, The dependence of the absorption coefficient change on the carrier temperature and the carrier densities is discussed.

中图分类号:  (III-V semiconductors)

  • 78.66.Fd
71.20.Nr (Semiconductor compounds) 78.47.-p (Spectroscopy of solid state dynamics) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 73.61.Ey (III-V semiconductors) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)