中国物理B ›› 1996, Vol. 5 ›› Issue (9): 705-712.doi: 10.1088/1004-423X/5/9/009
• • 上一篇
皮飞鹏1, 陈忠2, 胡湘威2, 赖天树2, 徐耕2, 莫党2, 林位株3
CHEN ZHONG (陈忠)a, PI FEI-PENG (皮飞鹏)c, HU XIANG-WEI (胡湘威)a, LAI TIAN-SHU (赖天树)a, XU GENG (徐耕)a, MO DANG (莫党)a, LIN WEI-ZHU (林位株)ab
摘要: Using CPM dye laser and self-mode-locked Ti sapphire laser as pump-probe optical sources, the effects of bandfilling and bandgap shrinkage on the femtosecond absorption saturation spectra of GaAs film have been studied, For exciting photon energy of 1.97eV and carrier density of 1×1018cm-3, an optical-induced absorption increase is observed and is attributed to bandgap shrinkage, The dependence of the absorption coefficient change on the carrier temperature and the carrier densities is discussed.
中图分类号: (III-V semiconductors)