中国物理B ›› 2026, Vol. 35 ›› Issue (7): 77302-077302.doi: 10.1088/1674-1056/ae7a06

• • 上一篇    下一篇

Anisotropic photogalvanic effects in monolayer WSe2 under elliptically polarized light

Jinyan Niu(牛金艳)1, Yonghong Ma(马永红)1, Wuming Liu(刘伍明)1,2,†, and Jia Liu(刘佳)1,‡   

  1. 1 School of Science, Inner Mongolia University of Science and Technology, Baotou 014010, China;
    2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2026-04-09 修回日期:2026-06-08 接受日期:2026-06-09 发布日期:2026-07-15
  • 通讯作者: Wuming Liu, Jia Liu E-mail:wmliu@iphy.ac.cn;jialiu@imust.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1400900, 2021YFA0718300, 2024YFF0726700, 12174461, 12234012, 12334012, and 52327808), the National Natural Science Foundation of China (Grant Nos. 12264037 and 12265022), the Natural Science Foundation of Inner Mongolia Autonomous Region of China (Grant Nos. 2025JQ007 and 2025LHMS01006), the Program for Young Talents in Science and Technology in Universities of Inner Mongolia Autonomous Region (Grant No. NJYT25031), the Fundamental Research Funds for Inner Mongolia University of Science, Technology (Grant No. 2023RCTD015), the China Scholarship Council (Grant No. 202308150117), the Elite Revitalizing Inner Mongolia Program (Grant No. 2025TGL05), and the Space Application System of the China Manned Space Program.

Anisotropic photogalvanic effects in monolayer WSe2 under elliptically polarized light

Jinyan Niu(牛金艳)1, Yonghong Ma(马永红)1, Wuming Liu(刘伍明)1,2,†, and Jia Liu(刘佳)1,‡   

  1. 1 School of Science, Inner Mongolia University of Science and Technology, Baotou 014010, China;
    2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2026-04-09 Revised:2026-06-08 Accepted:2026-06-09 Published:2026-07-15
  • Contact: Wuming Liu, Jia Liu E-mail:wmliu@iphy.ac.cn;jialiu@imust.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1400900, 2021YFA0718300, 2024YFF0726700, 12174461, 12234012, 12334012, and 52327808), the National Natural Science Foundation of China (Grant Nos. 12264037 and 12265022), the Natural Science Foundation of Inner Mongolia Autonomous Region of China (Grant Nos. 2025JQ007 and 2025LHMS01006), the Program for Young Talents in Science and Technology in Universities of Inner Mongolia Autonomous Region (Grant No. NJYT25031), the Fundamental Research Funds for Inner Mongolia University of Science, Technology (Grant No. 2023RCTD015), the China Scholarship Council (Grant No. 202308150117), the Elite Revitalizing Inner Mongolia Program (Grant No. 2025TGL05), and the Space Application System of the China Manned Space Program.

PDF (PC)

2

赞

摘要： We investigate the photogalvanic effect in monolayer WSe$_{2}$ under elliptically polarized light using non-equilibrium Green's function density functional theory (NEGF-DFT) simulations. When defects are added that reduce the intrinsic ${D}_{3h}$ symmetry to ${C}_{s}$ and ${C}_{2v}$, the photocurrent shows distinct direction-dependent responses: a sine function of the helicity angle along the zigzag direction and a cosine function along the armchair direction. This anisotropy arises from the specific nonzero tensor elements activated by symmetry reduction. Ga substitution is identified as a highly effective strategy, enhancing the polarization sensitivity by 55.54 times compared to that of pristine WSe$_{2}$. Furthermore, we reveal a resonant enhancement mechanism via impurity states introduced by Ga doping, as confirmed by projected density of states (PDOS) analysis. The application of a small bias voltage (0.04 V) further boosts the photocurrent by up to 368 times. These findings establish a direct link between crystal symmetry, defect engineering, and photoresponse, providing a pathway for high-performance polarization-sensitive optoelectronic devices.

关键词: photogalvanic effects, monolayer WSe$_{2}$, anisotropy, defect

Abstract: We investigate the photogalvanic effect in monolayer WSe$_{2}$ under elliptically polarized light using non-equilibrium Green's function density functional theory (NEGF-DFT) simulations. When defects are added that reduce the intrinsic ${D}_{3h}$ symmetry to ${C}_{s}$ and ${C}_{2v}$, the photocurrent shows distinct direction-dependent responses: a sine function of the helicity angle along the zigzag direction and a cosine function along the armchair direction. This anisotropy arises from the specific nonzero tensor elements activated by symmetry reduction. Ga substitution is identified as a highly effective strategy, enhancing the polarization sensitivity by 55.54 times compared to that of pristine WSe$_{2}$. Furthermore, we reveal a resonant enhancement mechanism via impurity states introduced by Ga doping, as confirmed by projected density of states (PDOS) analysis. The application of a small bias voltage (0.04 V) further boosts the photocurrent by up to 368 times. These findings establish a direct link between crystal symmetry, defect engineering, and photoresponse, providing a pathway for high-performance polarization-sensitive optoelectronic devices.

Key words: photogalvanic effects, monolayer WSe$_{2}$, anisotropy, defect

中图分类号:  (Photoconduction and photovoltaic effects)

  • 73.50.Pz
73.63.-b (Electronic transport in nanoscale materials and structures) 78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures) 72.10.-d (Theory of electronic transport; scattering mechanisms)